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Aluminum Germanium Sputtering Target,AlGe

Aluminum Germanium Sputtering Target (AlGe Target)

 

Product Overview
The Aluminum Germanium Sputtering Target is a high-purity alloy target primarily used in semiconductor, optical, and thin-film deposition industries. This target combines the lightweight, corrosion-resistant properties of aluminum with the superior electronic and optical characteristics of germanium, offering excellent performance in microelectronic and optoelectronic applications.

Key Specifications

PropertySpecification
CompositionAl/Ge alloy (commonly 90/10 at% or customized)
Purity99.95% (3N5) or higher
FormDisc, rectangular, or custom shape
Dimensions2″ diameter × 6 mm (standard) or per drawing
BondingOptional Indium or elastomer bonding to Cu backing plate
ProcessVacuum melting / hot pressing
Surface FinishFine-machined, mirror-like, Ra ≤ 0.8 μm
PackagingVacuum sealed in cleanroom environment, under inert gas protection

Applications

  • Thin-film deposition for semiconductors and MEMS devices

  • Optical coatings for infrared and visible applications

  • Decorative coatings and reflective films

  • Photovoltaic and sensor manufacturing

  • Alloyed contact layers in microelectronics

Advantages

  • Uniform sputtering performance with high density and fine grain structure

  • Excellent adhesion and film uniformity

  • Low impurity levels ensure stable film properties

  • Compatible with both DC and RF magnetron sputtering systems

Related Products

  • Aluminum Silicon Sputtering Target

  • Germanium Sputtering Target

  • Aluminum Tin Sputtering Target

  • Aluminum Titanium Sputtering Target

Related Applications & Synonyms

AlGe Thin Film Target, Aluminum-Germanium Alloy Target, Al-Ge PVD Material, Semiconductor Thin-Film Alloy Target, AlGe Sputter Target for Photonics and Sensors

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AlGe target 99.95% Al/Ge 90/10 at% 2"×6 mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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