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Aluminum Oxide Sputtering Target, Al2O3

Chemical Formula: Al2O3
Catalog Number: TFM-SPT-0016
CAS Number: 1344-28-1
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

COA_Al2O3_TRGPdf

Product Overview

Aluminum Oxide Sputtering Target (Al2O3) is a ceramic sputtering target used to deposit composition-specific oxide thin films. Compared with metallic targets, oxide targets are typically more sensitive to density, porosity, brittleness, thermal shock, and bonding design. In practice, target microstructure, thickness, cooling conditions, and the chosen sputtering mode can all affect arc stability, particle generation, and deposited-film performance.

Explore related material families and formats in the Sputtering Targets catalog.

Material and Deposition Characteristics

RF magnetron sputtering is commonly considered for insulating or semiconducting oxide targets, while sufficiently conductive formulations may allow alternative power modes in some systems. Target density and microstructural uniformity matter because pores, cracks, and local inhomogeneities can contribute to unstable plasma, particles, or target damage. For brittle ceramics, bonded assemblies and gradual power ramping are often worth evaluating.

Technical Data

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Higher purity improves dielectric strength and reduces contaminants
Diameter25 – 300 mm (custom)Matches most RF and magnetron sputtering systems
Thickness3 – 10 mmAffects sputtering lifetime and target strength
Density3.85 – 3.95 g/cm³Higher density improves film uniformity & reduces cracking
BondingIndium / Elastomer / Cu or Ti back plateEnhances heat transfer and deposition stability
MaterialKey AdvantageTypical Application
Al₂O₃Excellent dielectric strength & chemical resistanceSemiconductors, optical coatings
SiO₂Low refractive index, high transparencyOptical layers & insulation
MgOHigh thermal conductivity & good adhesionSuperconductor and protective films
QuestionAnswer
Can the product be customized?Yes. Purity, size, thickness, bonding, and geometry can all be customized.
How is it packaged?Vacuum-sealed with foam protection, placed in export-safe cartons or wooden crates.
Which industries use it most?Semiconductor, optics, aerospace, display manufacturing, and energy storage.
Do you offer bonding services?Yes, including indium bonding, elastomer bonding, and Cu/Ti backing plates.
Is Al₂O₃ suitable for RF sputtering?Yes. Due to its insulating nature, it is widely used in RF sputtering systems.

Typical Thin-Film Applications

  • Dielectric, insulating, optical, magnetic, protective, or functional ceramic thin films
  • Semiconductor, sensor, photonic, and multilayer coating research
  • Applications where oxide composition, density, and process stability affect film performance

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

Is Aluminum Oxide better suited to RF or DC sputtering?

RF magnetron sputtering is commonly considered for insulating or semiconducting oxide targets. If a specific formulation is sufficiently conductive, other modes may also be possible, but the equipment and target properties should be confirmed.

Why is density important for a Aluminum Oxide target?

Density and microstructural uniformity affect erosion stability, thermal behavior, and particle risk. Pores, cracks, or local density variations can contribute to unstable sputtering and target damage.

Should a Aluminum Oxide target be bonded to a backing plate?

Bonding is often useful for brittle oxide targets because it can improve mechanical support and heat transfer. The backing material and bonding method should be chosen according to target size, thickness, and operating conditions.

Will the deposited film always have the same composition as Al2O3?

Not always. Film composition can be affected by preferential sputtering, reactive gas, substrate temperature, re-sputtering, and chamber conditions. Composition-sensitive films should be verified after deposition.

How should power be ramped on a brittle Aluminum Oxide target?

A conservative power ramp and stable cooling are generally advisable. The exact operating procedure should follow the target size, bonding condition, cathode design, and supplier recommendations rather than a universal wattage.

What information should I provide when ordering Aluminum Oxide?

Provide formula or composition, purity, dimensions, quantity, backing and bonding requirements, cathode model or drawing, and any density, tolerance, or inspection requirements.

Typical specification reference: Download the Aluminum Oxide Sputtering Target Typical Specification Sheet (PDF). Illustrative planning values for preliminary RFQ discussion; not a batch CoA or guaranteed acceptance limit. Order-specific requirements and actual batch documentation govern.

Order Now

Al2O3 Target 4N ø50.8*3mm, Al2O3 Target 4N ø50.8*6mm, Al2O3 Target 4N ø50.8*3mm w/. Cu B/Plate, Al2O3 Target 4N ø50.8*6mm w/. Cu B/Plate, Al₂O₃ Target 4N ø50.8*2.0mm w/. 1.0mm Cu B/Plate, Al₂O₃ target ø4"×6mm 3N, Al₂O₃ Target 4N Ø2"×0.25" In Bonded 2 mm Cu BP with Keeper (2 pcs), Al2O3 99.99%, 1.00" Dia. × 0.125" Thick ST0129-01, Al2O3 99.999%, 1.00" Dia. × 0.125" Thick ST0129-02, Al2O3 99.99%, 1.00" Dia. × 0.250" Thick ST0129-03, Al2O3 99.999%, 1.00" Dia. × 0.250" Thick ST0129-04, Al2O3 99.99%, 2.00" Dia. × 0.125" Thick ST0129-05, Al2O3 99.999%, 2.00" Dia. × 0.125" Thick ST0129-06, Al2O3 99.99%, 2.00" Dia. × 0.250" Thick ST0129-07, Al2O3 99.999%, 2.00" Dia. × 0.250" Thick ST0129-08, Al2O3 99.99%, 3.00" Dia. × 0.125" Thick ST0129-09, Al2O3 99.999%, 3.00" Dia. × 0.125" Thick ST0129-10, Al2O3 99.99%, 3.00" Dia. × 0.250" Thick ST0129-11, Al2O3 99.999%, 3.00" Dia. × 0.250" Thick ST0129-12, Al2O3 99.99%, 4.00" Dia. × 0.125" Thick ST0129-13, Al2O3 99.999%, 4.00" Dia. × 0.125" Thick ST0129-14, Al2O3 99.99%, 4.00" Dia. × 0.250" Thick ST0129-15, Al2O3 99.999%, 4.00" Dia. × 0.250" Thick ST0129-16, Al2O3 99.99%, 6.00" Dia. × 0.250" Thick ST0129-17, Al2O3 99.999%, 6.00" Dia. × 0.250" Thick ST0129-18, Al2O3 99.99%, 8.00" Dia. × 0.250" Thick ST0129-19, Al2O3 99.999%, 8.00" Dia. × 0.250" Thick ST0129-20

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

Manufacturing routes depend on the material and target specification. Metal targets may be cast and machined, while some ceramic targets are consolidated by sintering. Ask for the product-specific route and inspection criteria when these affect qualification.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Bonding may be selected for brittle targets, thinner precious-metal targets, or a cathode that needs a specific backing and cooling arrangement. It is not a universal requirement. Provide target and backing dimensions, the cathode model, and operating conditions for assembly review.

 

DC is commonly used with conductive targets. RF is often used for poorly conducting or insulating targets to mitigate surface charging; other power modes may be suitable depending on the target, cathode, and process. Confirm the mode against the equipment and material.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Customer-supplied powder acceptance is not assumed. Provide material identity, lot traceability, composition and impurity analysis, quantity, and handling constraints in the RFQ. TFM must confirm feasibility and acceptance criteria before any material is sent.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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