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Aluminum Silicon Copper Sputtering Target, Al/Si/Cu

Chemical Formula: Al/Si/Cu
Catalog Number: TFM-SPT-0019
CAS Number: 7429-90-5 | 7440
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Silicon Copper sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Product Overview

Aluminum Silicon Copper Sputtering Target (Al/Si/Cu) is an alloy sputtering target used to deposit composition-controlled alloy films. Relative to a pure elemental target, the alloying constituents are introduced to tune electrical, magnetic, optical, mechanical, or adhesion-related film properties. For this reason, alloy ratio, homogeneity, purity basis, and the intended film composition should be defined clearly in the procurement specification.

Material and Deposition Characteristics

Many alloy targets are electrically conductive and can be compatible with DC or pulsed-DC magnetron sputtering, subject to the actual alloy composition and equipment capability. The target composition is not always reproduced exactly in the deposited film because preferential sputtering, re-sputtering, substrate heating, and process gas conditions can shift the final ratio. For composition-sensitive work, deposited-film analysis should be part of process qualification.

Technical Data

ParameterTypical Value / RangeImportance
CompositionAl / Si / Cu (custom ratios available)Determines electrical and mechanical film properties
Purity99.9% – 99.99%Reduces impurities and improves film consistency
Diameter / Size25 – 300 mm (custom available)Compatible with different sputtering systems
Thickness3 – 6 mm (custom available)Influences sputtering rate and target life
BondingCopper or Titanium backing plateEnhances heat dissipation and stability
Surface FinishFine-machined, low roughnessEnsures uniform plasma interaction
MaterialKey AdvantageTypical Application
Aluminum Silicon Copper (Al/Si/Cu)Improved electromigration resistance and stabilitySemiconductor metallization
Aluminum (Al)Simple composition, low costGeneral conductive coatings
Aluminum Copper (Al/Cu)Higher conductivity than pure AlPower electronics
Aluminum Silicon (Al/Si)Reduced hillock formationIC barrier layers
QuestionAnswer
Can the Al/Si/Cu ratio be customized?Yes, compositions can be tailored to specific process requirements.
Is bonding to a backing plate necessary?Bonding is recommended for better thermal management and longer target life.
What sputtering methods are compatible?DC and RF magnetron sputtering systems.
How is target quality ensured?Each target undergoes strict dimensional, compositional, and visual inspection.

Typical Thin-Film Applications

  • Aluminum Silicon Copper alloy films where composition control is important to electrical, mechanical, magnetic, or optical performance
  • Multilayer stacks, adhesion/barrier layers, conductive films, or functional coatings depending on the alloy system
  • Research and production programs that require customized alloy ratios and repeatable sputtering behavior

Target Configuration and Ordering Considerations

For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.

Frequently Asked Questions

Can the composition of a Aluminum Silicon Copper sputtering target be customized?

Yes. For alloy targets, the required ratio should be specified clearly in wt% or at%. TFM can review custom compositions together with purity, dimensions, and manufacturability.

Will an alloy target always produce a film with the same composition?

Not necessarily. Preferential sputtering, substrate heating, process gas, and re-sputtering effects can shift the deposited composition relative to the nominal target chemistry. Film analysis should be used when the composition is critical.

Is a Aluminum Silicon Copper alloy target compatible with DC magnetron sputtering?

Many metallic alloy targets are electrically conductive and can be compatible with DC or pulsed-DC sputtering, but the final choice depends on the actual alloy system and equipment.

Why is alloy homogeneity important in a Aluminum Silicon Copper target?

A uniform alloy distribution helps support stable erosion and reduces local composition variation across the target, which in turn helps improve run-to-run consistency.

Can a Aluminum Silicon Copper target be supplied bonded?

Yes. Where the cathode or thermal load requires it, TFM can supply bonded assemblies. Backing-plate material, target thickness, bonding method, and operating power should be reviewed together.

What should I include in an RFQ for Aluminum Silicon Copper?

Specify the alloy composition, purity basis, dimensions, quantity, backing requirement, cathode model or drawing, and any tolerance, inspection, or documentation requirements.

Order Now

AlSiCu 99.999%, 1.00" Dia. × 0.125" Thick ST0066-01, AlSiCu 99.999%, 1.00" Dia. × 0.250" Thick ST0066-02, AlSiCu 99.999%, 2.00" Dia. × 0.125" Thick ST0066-03, AlSiCu 99.999%, 2.00" Dia. × 0.250" Thick ST0066-04, AlSiCu 99.999%, 3.00" Dia. × 0.125" Thick ST0066-05, AlSiCu 99.999%, 3.00" Dia. × 0.250" Thick ST0066-06, AlSiCu 99.999%, 4.00" Dia. × 0.125" Thick ST0066-07, AlSiCu 99.999%, 4.00" Dia. × 0.250" Thick ST0066-08

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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