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Aluminum Silicon Copper Sputtering Target

ST0066 Aluminum Silicon Copper Sputtering Target, Al/Si/Cu

Chemical Formula: Al/Si/Cu
Catalog Number: ST0066
CAS Number: 7429-90-5 | 7440
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Silicon Copper sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

The ST0066 Aluminum Silicon Copper Sputtering Target (Al/Si/Cu) is a widely adopted alloy target engineered for advanced thin-film deposition processes. By combining aluminum with carefully controlled amounts of silicon and copper, this target delivers a balanced solution for applications that demand reliable electrical performance, strong adhesion, and long-term process stability. It is especially valued in semiconductor and microelectronics manufacturing, where consistent film properties and compatibility with large-scale sputtering systems are critical.

Detailed Description

Aluminum Silicon Copper sputtering targets are designed to address the limitations of pure aluminum films, such as poor electromigration resistance and mechanical instability under high current density. The addition of silicon helps suppress hillock formation and improves film smoothness, while copper enhances electrical conductivity and electromigration resistance.

ST0066 Al/Si/Cu targets are produced using high-purity raw materials and advanced melting and forming processes to ensure uniform composition and dense microstructure. This compositional homogeneity translates directly into stable sputtering behavior, predictable deposition rates, and reduced particle generation during operation.

The targets are available in various shapes and dimensions, including round, rectangular, and custom designs, with optional bonding to copper or titanium backing plates. Proper bonding improves thermal conductivity and mechanical stability, allowing the target to withstand higher power densities and extended sputtering cycles without warping or delamination.

Applications

Aluminum Silicon Copper Sputtering Targets are extensively used in industries requiring conductive and barrier thin films, including:

  • Semiconductor interconnect layers and metallization

  • Integrated circuits (ICs) and logic devices

  • Power devices and MEMS components

  • Flat panel displays and advanced packaging

  • Functional and protective coatings in electronics

These applications benefit from the alloy’s excellent balance of conductivity, adhesion, and reliability.

Technical Parameters

ParameterTypical Value / RangeImportance
CompositionAl / Si / Cu (custom ratios available)Determines electrical and mechanical film properties
Purity99.9% – 99.99%Reduces impurities and improves film consistency
Diameter / Size25 – 300 mm (custom available)Compatible with different sputtering systems
Thickness3 – 6 mm (custom available)Influences sputtering rate and target life
BondingCopper or Titanium backing plateEnhances heat dissipation and stability
Surface FinishFine-machined, low roughnessEnsures uniform plasma interaction

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Aluminum Silicon Copper (Al/Si/Cu)Improved electromigration resistance and stabilitySemiconductor metallization
Aluminum (Al)Simple composition, low costGeneral conductive coatings
Aluminum Copper (Al/Cu)Higher conductivity than pure AlPower electronics
Aluminum Silicon (Al/Si)Reduced hillock formationIC barrier layers

FAQ

QuestionAnswer
Can the Al/Si/Cu ratio be customized?Yes, compositions can be tailored to specific process requirements.
Is bonding to a backing plate necessary?Bonding is recommended for better thermal management and longer target life.
What sputtering methods are compatible?DC and RF magnetron sputtering systems.
How is target quality ensured?Each target undergoes strict dimensional, compositional, and visual inspection.

Packaging

Our ST0066 Aluminum Silicon Copper Sputtering Targets are carefully tagged and labeled for accurate identification and traceability. Each target is vacuum-sealed and protected with cushioning materials to prevent contamination or mechanical damage during storage and transportation. Export-grade cartons or wooden crates are used to ensure safe global delivery.

Conclusion

The ST0066 Aluminum Silicon Copper Sputtering Target (Al/Si/Cu) offers a proven combination of performance, reliability, and customization for demanding thin-film deposition applications. With controlled composition, excellent sputtering stability, and flexible sizing options, it is a dependable choice for semiconductor and advanced electronics manufacturing.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Order Now

AlSiCu 99.999%, 1.00" Dia. × 0.125" Thick ST0066-01, AlSiCu 99.999%, 1.00" Dia. × 0.250" Thick ST0066-02, AlSiCu 99.999%, 2.00" Dia. × 0.125" Thick ST0066-03, AlSiCu 99.999%, 2.00" Dia. × 0.250" Thick ST0066-04, AlSiCu 99.999%, 3.00" Dia. × 0.125" Thick ST0066-05, AlSiCu 99.999%, 3.00" Dia. × 0.250" Thick ST0066-06, AlSiCu 99.999%, 4.00" Dia. × 0.125" Thick ST0066-07, AlSiCu 99.999%, 4.00" Dia. × 0.250" Thick ST0066-08

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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