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ST0066 Aluminum Silicon Copper Sputtering Target, Al/Si/Cu

Chemical Formula: Al/Si/Cu
Catalog Number: ST0066
CAS Number: 7429-90-5 | 7440
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Silicon Copper sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Aluminum Silicon Copper Sputtering Target Description

The aluminum silicon copper sputtering target from TFM is an alloy sputtering material composed of aluminum (Al), silicon (Si), and copper (Cu).

Aluminum

Aluminum:

Aluminum, also known as aluminium, derives its name from the Latin word for alum, ‘alumen,’ meaning bitter salt. It was first mentioned and observed in 1825 by H.C. Ørsted, who later succeeded in isolating it. The chemical symbol for aluminum is “Al,” and it has the atomic number 13. Positioned in Period 3 and Group 13 of the periodic table, it belongs to the p-block. The relative atomic mass of aluminum is 26.9815386(8) Dalton, with the number in brackets indicating the uncertainty.

Related Product: Aluminum (Al) Sputtering Target

Silicon

Silicon:

Silicon is a chemical element that gets its name from the Latin words ‘silex’ or ‘silicis,’ meaning flint. It was first mentioned and observed in 1824 by J. Berzelius, who also succeeded in isolating it. The chemical symbol for silicon is “Si,” and it has the atomic number 14. Silicon is located in Period 3, Group 14 of the periodic table, and belongs to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, with the number in brackets indicating the uncertainty.

Related Product: N-type Silicon Sputtering Target

Copper

Copper:

Copper is a chemical element with origins traced back to the Old English name “coper,” derived from the Latin ‘Cyprium aes,’ meaning metal from Cyprus. It was first used around 9000 BC and discovered by people from the Middle East. The chemical symbol for copper is “Cu,” and it has the atomic number 29. Copper is located in Period 4, Group 11 of the periodic table, belonging to the d-block. The relative atomic mass of copper is 63.546(3) Dalton, with the number in brackets indicating the uncertainty.

Related Product: Copper Sputtering Target

Aluminum Silicon Copper Sputtering Target Packing

Our aluminum silicon copper sputter targets are carefully tagged and labeled externally to ensure efficient identification and stringent quality control. We take great care to prevent any potential damage during storage or transportation, ensuring that each target arrives in perfect condition.

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TFM offers Aluminum Silicon Copper Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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