Product Overview
Aluminum Telluride Sputtering Target (Al2Te3) is a chalcogenide sputtering target intended for composition-sensitive thin-film deposition. For sulfur-, selenium-, or tellurium-containing materials, the target chemistry is only the starting point: sputtering yield differences, substrate temperature, gas pressure, and volatile-component loss can shift the deposited-film composition relative to the nominal target composition.
Material and Deposition Characteristics
These targets are commonly treated as mechanically brittle and composition-sensitive sputtering materials. RF sputtering is often considered when target conductivity is limited. Power density, substrate temperature, and working pressure should be controlled conservatively, and the deposited film composition should be verified when precise sulfur, selenium, or tellurium stoichiometry is required.
Technical Data
| Parameter | Typical Value / Range | Importance |
|---|---|---|
| Purity | 99.9% – 99.99% | High purity ensures reliable semiconductor film properties |
| Chemical Formula | Al₂Te₃ | Determines compound stoichiometry and electronic structure |
| Diameter | 25 – 300 mm (custom) | Compatible with common sputtering systems |
| Thickness | 3 – 6 mm | Influences sputtering stability and target lifetime |
| Density | ≥ 95% theoretical density | Improves sputtering efficiency and film uniformity |
| Bonding | Copper backing plate / Indium bonded | Enhances heat transfer and structural stability |
| Material | Key Advantage | Typical Application |
|---|---|---|
| Aluminum Telluride (Al₂Te₃) | Semiconductor properties with telluride-based functionality | Optoelectronic and thermoelectric research |
| Aluminum Oxide (Al₂O₃) | Excellent dielectric properties | Insulating thin films |
| Tellurium (Te) | Strong thermoelectric and semiconductor behavior | IR detectors and thermoelectric materials |
| Question | Answer |
|---|---|
| Can the Al₂Te₃ sputtering target be customized? | Yes. Diameter, thickness, and bonding configurations can be customized to match different sputtering systems. |
| Which sputtering methods are compatible with this target? | Aluminum Telluride targets can be used in RF magnetron sputtering and other PVD deposition methods suitable for compound semiconductors. |
| Are bonded targets available? | Yes. Targets can be bonded to copper backing plates using indium or other bonding techniques to improve heat dissipation. |
| What purity levels are typically available? | Standard purities range from 99.9% to 99.99% depending on application requirements. |
| What substrates can Al₂Te₃ films be deposited on? | Thin films can be deposited on silicon wafers, glass, ceramics, and other semiconductor substrates. |
Typical Thin-Film Applications
- Chalcogenide thin films for optical, infrared, electronic, thermoelectric, and phase-change research
- Compound semiconductor layers and advanced-material thin-film studies
- Projects where composition retention and controlled sputtering of brittle materials are important
Target Configuration and Ordering Considerations
When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.
Frequently Asked Questions
What sputtering mode is commonly used for Aluminum Telluride?
RF magnetron sputtering is often considered when the target conductivity is limited or when more conservative operation is preferred for brittle, composition-sensitive compounds.
Can Aluminum Telluride films lose sulfur, selenium, or tellurium during deposition?
Yes. Composition drift can occur because of preferential sputtering, substrate heating, re-sputtering, and volatile-component loss. Film composition should be checked when stoichiometry is important.
Why is bonding important for a Aluminum Telluride target?
Many chalcogenide targets are brittle and have modest thermal conductivity. A suitable backing plate and bonding layer can improve mechanical support and heat transfer during sputtering.
Does the target composition guarantee film stoichiometry for Al2Te3?
No. The target composition is the starting source composition, but the deposited film can still shift because of process variables. Film analysis should be used to confirm the final stoichiometry.
What process variables should be monitored when sputtering Aluminum Telluride?
Useful variables include power density, working pressure, substrate temperature, cooling, target conditioning, and deposited-film composition. If reactive gas is used, gas ratio should also be controlled carefully.
What should I send TFM for a custom Aluminum Telluride target?
Please provide composition or formula, purity, dimensions, quantity, backing or bonding details, cathode model, and any film-composition or inspection requirements relevant to your project.
Reviews
There are no reviews yet.