Product Overview
Arsenic Telluride Sputtering Target (As2Te3) is a chalcogenide sputtering target intended for composition-sensitive thin-film deposition. For sulfur-, selenium-, or tellurium-containing materials, the target chemistry is only the starting point: sputtering yield differences, substrate temperature, gas pressure, and volatile-component loss can shift the deposited-film composition relative to the nominal target composition.
Material and Deposition Characteristics
These targets are commonly treated as mechanically brittle and composition-sensitive sputtering materials. RF sputtering is often considered when target conductivity is limited. Power density, substrate temperature, and working pressure should be controlled conservatively, and the deposited film composition should be verified when precise sulfur, selenium, or tellurium stoichiometry is required.
Technical Data
| Parameter | Typical Value / Range | Importance |
|---|---|---|
| Chemical Composition | As₂Te₃ | Determines phase-change and IR properties |
| Purity | 99.9% – 99.99% | Reduces defect-related absorption |
| Diameter | 25 – 200 mm (custom available) | Compatible with sputtering systems |
| Thickness | 3 – 6 mm | Influences target lifetime |
| Density | ≥ 95% theoretical | Improves plasma stability |
| Sputtering Mode | RF sputtering | Suitable for semiconducting compounds |
| Bonding | Unbonded / Cu backing (optional) | Enhances heat dissipation |
| Material | Key Advantage | Typical Application |
|---|---|---|
| As₂Te₃ | High refractive index & IR transparency | IR optics & PCM |
| Ge–Sb–Te (GST) | Established phase-change material | Memory devices |
| As₂Se₃ | Broader IR transmission range | Optical waveguides |
| Te-based alloys | Fast crystallization | Data storage |
| Question | Answer |
|---|---|
| Can the target size be customized? | Yes, diameter, thickness, and bonding options are available. |
| Is RF sputtering required? | Yes, As₂Te₃ is typically deposited using RF sputtering. |
| Are bonded targets available? | Yes, metallic backing plates can be supplied upon request. |
| How is the target packaged? | Vacuum-sealed with protective cushioning and export-grade cartons or crates. |
Typical Thin-Film Applications
- Chalcogenide thin films for optical, infrared, electronic, thermoelectric, and phase-change research
- Compound semiconductor layers and advanced-material thin-film studies
- Projects where composition retention and controlled sputtering of brittle materials are important
Target Configuration and Ordering Considerations
When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.
Frequently Asked Questions
What sputtering mode is commonly used for Arsenic Telluride?
RF magnetron sputtering is often considered when the target conductivity is limited or when more conservative operation is preferred for brittle, composition-sensitive compounds.
Can Arsenic Telluride films lose sulfur, selenium, or tellurium during deposition?
Yes. Composition drift can occur because of preferential sputtering, substrate heating, re-sputtering, and volatile-component loss. Film composition should be checked when stoichiometry is important.
Why is bonding important for a Arsenic Telluride target?
Many chalcogenide targets are brittle and have modest thermal conductivity. A suitable backing plate and bonding layer can improve mechanical support and heat transfer during sputtering.
Does the target composition guarantee film stoichiometry for As2Te3?
No. The target composition is the starting source composition, but the deposited film can still shift because of process variables. Film analysis should be used to confirm the final stoichiometry.
What process variables should be monitored when sputtering Arsenic Telluride?
Useful variables include power density, working pressure, substrate temperature, cooling, target conditioning, and deposited-film composition. If reactive gas is used, gas ratio should also be controlled carefully.
What should I send TFM for a custom Arsenic Telluride target?
Please provide composition or formula, purity, dimensions, quantity, backing or bonding details, cathode model, and any film-composition or inspection requirements relevant to your project.
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