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Carbon Graphite Sputtering Target, C

Chemical Formula: C
Catalog Number: TFM-SPT-0102
CAS Number: 7782-42-5
Purity: 99.99%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Carbon Graphite Sputtering Targets come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Product Overview

Carbon Graphite Sputtering Target (C) is an elemental sputtering target used as a direct film source or as a component in composition-sensitive compound-film development. Because many semimetallic or nonmetallic elements are used in optical, electronic, or chalcogenide-related systems, target purity and contamination control can be especially important when the sputtered layer forms part of a functional multilayer stack.



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Material and Deposition Characteristics

The preferred power mode depends on the target’s electrical resistivity and the deposition system. Some elemental targets in this family can be processed with DC or pulsed-DC sputtering, while others may require RF sputtering or more conservative operating conditions. When the deposited film acts as a precursor layer for a compound or multilayer system, film analysis is recommended to verify the final composition and structure.

Technical Data

Material TypeCarbon
SymbolC
Color/AppearanceBlack, Non-Metallic
Melting Point3652 – 3697 °C
Boiling Point4200 °C
Density2.267 g/cm3
Thermal Conductivity140 W/m.K
Coefficient of Thermal Expansion7.1 x 10-6/K
CommentsE-beam preferred. Arc evaporation. Poor film adhesion.
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Typical Thin-Film Applications

  • Carbon Graphite-based thin films and precursor layers for semiconductor, optical, and functional coating research
  • Chalcogenide, thermoelectric, infrared, electronic, or phase-change material development where applicable
  • Projects requiring a specific elemental source for co-sputtering or subsequent compound formation

Target Configuration and Ordering Considerations

For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.

Frequently Asked Questions

What is a Carbon Graphite sputtering target typically used for?

It is used either to deposit the elemental film directly or to serve as a source component in compound, optical, electronic, chalcogenide, or other functional thin-film systems.

Should Carbon Graphite be sputtered with DC or RF power?

The best power mode depends on target resistivity, dimensions, and sputtering-system capability. Some elemental targets in this family can work with DC or pulsed-DC power, while others are more commonly evaluated with RF power.

Why is purity important for a Carbon Graphite target?

Many of these materials are used in composition-sensitive thin films, so metallic or chemical impurities can affect the behavior of the final film or multilayer stack. The target purity should therefore be matched to the application.

Can a Carbon Graphite target be supplied in a bonded assembly?

Yes, if the cathode design or thermal considerations make a backing plate desirable. The specific backing material and bonding method should be reviewed against target size and operating conditions.

Does target composition guarantee film composition for Carbon Graphite?

Not always. Film composition can shift because of sputtering conditions, substrate temperature, chamber history, and re-sputtering effects. Film analysis is recommended when the final composition is critical.

What should be included in an RFQ for Carbon Graphite?

Provide purity, dimensions, quantity, target configuration, backing requirement if any, cathode model or drawing, and any special packaging or inspection-document requirements.

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C Target 4N ø6"*3mm, C Target 5N ø6"*3mm, C target 4N 200×100×2 mm In bonded 8 mm Cu BP slot

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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