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ST0953 Arsenic Telluride Sputtering Target, As2Te3

Chemical FormulaAs2Te3
Catalog No.ST0953
CAS Number12044-54-1
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Arsenic Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Arsenic Telluride Sputtering Target Description

Arsenic Telluride Sputtering Target is a specialized material used in sputtering, a technique for thin film deposition. In this process, Arsenic Telluride acts as the target material, which is bombarded with energetic particles, usually ions. This bombardment releases atoms from the target, which then deposit as a thin film onto a substrate, creating a coating with specific properties.

The Arsenic Telluride Sputtering Targets are distinguished by their excellent chemical stability, high electrical conductivity, thermal stability, and antioxidant properties. These attributes are enhanced by a precision design and a specialized manufacturing process. These characteristics make Arsenic Telluride Sputtering Targets highly valuable in the semiconductor industry and advanced electronic device manufacturing, where precise and reliable thin film deposition is essential for optimal device performance.

Related Product: Arsenic Triselenide Sputtering Target, Arsenic Trisulfide Sputtering Target

Arsenic Telluride Sputtering Target Specifications

Compound FormulaAs2Te3
Molecular Weight532.64
AppearanceBlack Target
Melting Point621 °C
Density6.5 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Arsenic Telluride Sputtering Target Handling Notes

Indium bonding is recommended for Arsenic Telluride Sputtering Targets due to its characteristics such as brittleness and low thermal conductivity. This material has low thermal conductivity and is susceptible to thermal shock, making indium bonding an effective choice to enhance its performance during sputtering processes.

Arsenic Telluride Sputtering Target Application

Arsenic Telluride Sputtering Targets find application in several fields:

  1. Semiconductor Industry: Used in thin film deposition to manufacture advanced electronic devices such as transistors and integrated circuits.
  2. Optoelectronics: Employed in the production of optoelectronic devices, including lasers and photodiodes.
  3. Optical Coatings: Applied in creating high-quality optical coatings for components like anti-reflective coatings and optical filters.
  4. Magnetic Storage: Utilized in the preparation of magnetic films to enhance the performance of magnetic storage devices.
  5. Nanotechnology Research: Used for creating nanoscale films and structures in nanotechnology research due to their precision and performance.
  6. Energy Storage: Applied in the development of high-performance electrode materials for new batteries and supercapacitors.

Arsenic Telluride Sputtering Target Packaging

Our Arsenic Telluride Sputtering Target is carefully handled during storage and transportation to maintain its quality and ensure it arrives in optimal condition.

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TFM offers Arsenic Telluride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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