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ST0935 Arsenic Triselenide Sputtering Target, As2Se3

Chemical FormulaAs2Se3
Catalog No.ST0935
CAS Number1303-36-2
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Arsenic Triselenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Arsenic Triselenide Sputtering Target Description

The Arsenic Triselenide Sputtering Target, crafted from high-purity arsenic triselenide, is ideal for applications in semiconductors, optics, and photovoltaics. Utilizing sputtering technology, ultra-high purity metals or oxides are precisely deposited onto solid substrates, resulting in uniform, dense, and ultra-thin films.

Arsenic triselenide’s unique structure gives it remarkable optical properties, such as specific absorption and transmission characteristics in the infrared spectral range, along with non-linear optical properties. Additionally, it exhibits distinctive thermoelectric and electrical properties, making it a valuable material for advanced technological applications.

Related Product: Arsenic Trisulfide Sputtering Target

Arsenic Triselenide Sputtering Target Specifications

Compound FormulaAs2Se3
Molecular Weight386.72
AppearanceBlack Target
Melting Point300℃
Density4.75 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Arsenic Triselenide Sputtering Target Handling Notes

Indium bonding is recommended for the Arsenic Triselenide Sputtering Target because of the material’s brittleness and low thermal conductivity, which can present challenges during sputtering. These properties make the target susceptible to thermal shock. Indium bonding helps to mitigate these issues, enhancing the target’s stability and performance during the sputtering process.

Arsenic Triselenide Sputtering Target Application

Arsenic Triselenide Sputtering Targets offer unique properties that make them ideal for applications in optics and photovoltaics. Additionally, they are widely used in display technology through chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. For superior performance in your research and applications, select high-purity, high-quality Arsenic Triselenide Sputtering Targets from TFM.

Arsenic Triselenide Sputtering Target Packaging

Our Arsenic Triselenide Sputtering Target is meticulously handled throughout storage and transportation to ensure that it maintains its original quality and condition. We take every precaution to preserve the integrity of our products, so they arrive ready for optimal performance.

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TFM offers Arsenic Triselenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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