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Barium Ruthenium Oxide Sputtering Target

ST0954 Barium Ruthenium Oxide Sputtering Target, BaRuO3

Chemical FormulaBaRuO3
Catalog No.ST0954
CAS Number12009-17-5
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Barium Ruthenium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Barium Ruthenium Oxide Sputtering Target (BaRuO₃) is a functional perovskite oxide material widely used in advanced thin-film research and electronic device fabrication. Known for its unique combination of metallic conductivity and oxide stability, BaRuO₃ is an important material for conductive oxide layers, epitaxial film growth, and oxide electronics. Its compatibility with complex oxide heterostructures makes it particularly valuable in cutting-edge R&D and next-generation electronic systems.

Detailed Description

BaRuO₃ sputtering targets are fabricated from high-purity precursor powders with carefully controlled stoichiometry to ensure a stable Ba:Ru:O ratio. Through optimized ceramic processing—including calcination, pressing, and high-temperature sintering—the targets achieve high density, low porosity, and uniform microstructure. These characteristics are essential for maintaining compositional consistency during sputtering and minimizing particle generation.

As a conductive oxide, BaRuO₃ offers advantages over many insulating perovskite oxides by enabling more stable plasma conditions and higher deposition efficiency. Depending on system configuration, BaRuO₃ targets can be used in RF sputtering or pulsed DC sputtering processes. Deposited BaRuO₃ thin films exhibit good electrical conductivity, thermal stability, and strong lattice compatibility with common oxide substrates such as SrTiO₃ and LaAlO₃.

These properties make BaRuO₃ an attractive choice for bottom electrodes, conductive buffer layers, and functional oxide stacks where both electrical performance and chemical robustness are required.

Applications

Barium Ruthenium Oxide sputtering targets are commonly used in:

  • Oxide electronics: Conductive layers in complex oxide devices

  • Thin-film electrodes: Bottom electrodes for ferroelectric and dielectric films

  • Perovskite heterostructures: Epitaxial growth and interface engineering

  • Resistive switching devices: RRAM and neuromorphic research

  • Spintronics & functional oxides: Advanced physics and materials research

  • Academic & industrial R&D: Exploration of correlated electron systems

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionBaRuO₃Defines electrical and structural behavior
Crystal StructurePerovskite-type oxideEnables epitaxial film growth
Purity99.9% – 99.99%Reduces defects and impurities
StoichiometryBa:Ru:O precisely controlledEnsures film consistency
Diameter25 – 200 mm (custom)Compatible with sputtering cathodes
Thickness3 – 6 mm (typical)Influences target lifetime
Density≥ 95% of theoreticalSupports stable sputtering
BondingIndium / Elastomer / DirectImproves thermal and mechanical stability

Comparison with Related Conductive Oxides

MaterialKey AdvantageTypical Application
BaRuO₃Metallic conductivity with oxide stabilityElectrodes & oxide electronics
SrRuO₃Excellent epitaxy, widely studiedFerroelectric electrodes
RuO₂Very high conductivityElectrodes, resistors
LaNiO₃Good lattice matchBuffer and electrode layers

FAQ

QuestionAnswer
Can BaRuO₃ sputtering targets be customized?Yes, size, purity, density, and bonding can be tailored.
Which sputtering method is recommended?RF or pulsed DC sputtering is commonly used.
Is BaRuO₃ suitable for epitaxial growth?Yes, it is frequently used in epitaxial oxide film research.
How is the target packaged?Vacuum-sealed with protective cushioning for safe transport.

Packaging

Our Barium Ruthenium Oxide Sputtering Targets (BaRuO₃) are carefully labeled for traceability and packaged using vacuum sealing and reinforced protective materials. This ensures cleanliness, compositional integrity, and protection against moisture or mechanical damage during storage and international shipment.

Conclusion

Barium Ruthenium Oxide Sputtering Target (BaRuO₃) is a high-value material for conductive oxide thin films and advanced perovskite-based devices. With reliable sputtering performance, precise stoichiometric control, and flexible customization options, BaRuO₃ targets support both fundamental research and advanced electronic applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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