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ST0954 Barium Ruthenium Oxide Sputtering Target, BaRuO3

Chemical FormulaBaRuO3
Catalog No.ST0954
CAS Number12009-17-5
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Barium Ruthenium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Barium Ruthenium Oxide Sputtering Target Description

Barium Ruthenium Oxide is an oxide with metallic conductivity, offering excellent electronic conductivity which makes it a strong candidate for thin film deposition in semiconductor and electronic devices. It also exhibits some catalytic activity, suggesting potential applications in catalytic processes. Additionally, Barium Ruthenium Oxide is known for its high thermal stability, maintaining its physical and chemical properties at elevated temperatures. With precision preparation, Barium Ruthenium Oxide Sputtering Targets ensure high purity, contributing to superior performance and stability in both research and industrial applications.

Related Product: Barium Titanate Sputtering Target, Barium Zirconate Sputtering Target

Barium Ruthenium Oxide Sputtering Target Specifications

Compound FormulaBaRuO3
Molecular Weight286.39
AppearanceBlack Target
Melting Point–
Density–
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Barium Ruthenium Oxide Sputtering Target Handling Notes

Indium bonding is recommended for Barium Ruthenium Oxide Sputtering Targets due to the material’s brittleness and low thermal conductivity, which are not ideal for sputtering processes. This oxide has a low thermal conductivity and is susceptible to thermal shock, making indium bonding a suitable choice to address these issues and enhance the target’s performance and stability during use.

Barium Ruthenium Oxide Sputtering Target Application

Semiconductor Preparation: Barium Ruthenium Oxide is used in the semiconductor industry for thin film deposition to create conductive layers that enhance the performance of electronic devices.

Optoelectronics: The target is employed in the production of photodiodes, photodetectors, and other optical components in the field of optoelectronics.

Magnetic Materials Research: Its magnetic properties make Barium Ruthenium Oxide suitable for research into magnetic materials, with applications in magnetic memory devices and sensors.

Catalytic Applications: With its catalytic activity, Barium Ruthenium Oxide can be used to catalyze chemical reactions, playing a role in chemical synthesis and energy applications.

High-Temperature Stable Materials: The material’s high thermal stability allows it to be used in the preparation of components for high-temperature environments, such as high-temperature electronic devices.

Barium Ruthenium Oxide Sputtering Target Packaging

Our Barium Ruthenium Oxide Sputtering Target is carefully handled during storage and transportation to ensure that it maintains its quality and performance in its original condition.

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TFM offers Barium Ruthenium Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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