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ST0137 Bismuth Iron Oxide Sputtering Target, Bi3Fe5O12

Chemical Formula: Bi3Fe5O12
Catalog Number: ST0137
CAS Number: 12048-65-6
Purity: 99.9%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Bismuth Iron Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Bismuth Iron Oxide Sputtering Target Description

The Bismuth Iron Oxide Sputtering Target from TFM is an oxide sputtering material with the chemical formula Bi3Fe5O12.

BismuthBismuth is a chemical element whose name originates from the German word ‘Bisemutum,’ a corruption of ‘Weisse Masse,’ meaning white mass. It was first used in 1753 and discovered by C.F. Geoffroy. The chemical symbol for bismuth is “Bi,” and its atomic number is 83. Bismuth is located in Period 6, Group 15 of the periodic table, within the p-block. Its relative atomic mass is 208.98040(1) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: Bismuth (Bi) Sputtering Target

ironIron, also known as ferrum, is a chemical element with its name originating from the Anglo-Saxon word “iren” and the Latin word “ferrum.” It has been in use since before 5000 BC. The chemical symbol for iron is “Fe,” and it has an atomic number of 26. Iron is located in Period 4, Group 8 of the periodic table, within the d-block. Its relative atomic mass is 55.845(2) Dalton, with the number in parentheses indicating the measurement uncertainty.

Related Product: Iron (Fe) Sputtering Target

OxygenOxygen is a chemical element whose name is derived from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first mentioned and observed by W. Scheele in 1771, who also later accomplished and announced its isolation. The chemical symbol for oxygen is “O,” and it has an atomic number of 8. Oxygen is located in Period 2, Group 16 of the periodic table, within the p-block. Its relative atomic mass is 15.9994(3) Dalton, with the number in brackets indicating the uncertainty of the measurement.

Bismuth Iron Oxide Sputtering Target Application

The Bismuth Iron Oxide Sputtering Target is utilized in a variety of applications, including thin film deposition, decorative coatings, semiconductors, displays, LEDs, and photovoltaic devices. It is also essential for functional coatings, the optical information storage industry, glass coatings for automotive and architectural glass, and optical communication systems, among other fields.

Bismuth Iron Oxide Sputtering Target Packing

Our Bismuth Iron Oxide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain strict quality control. We take extensive precautions to prevent any damage during storage and transportation, ensuring the highest standards of product integrity upon delivery.

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TFM offers Bismuth Iron Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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