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Cadmium Zinc Sulfide Sputtering Target

ST1009 Cadmium Zinc Sulfide Sputtering Target, ZnS-CdS

Chemical FormulaZnS-CdS
Catalog No.ST1009
CAS Number12442-27-2
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Explore the precision of Cadmium Zinc Sulfide Sputtering Targets from TFM. Carefully crafted with attention to detail, these targets offer exceptional quality and performance, making them an excellent choice for accurate thin film deposition.

MSDS File

Cadmium Zinc Sulfide Sputtering Target Description

Cadmium Zinc Sulfide (ZnS-CdS) Sputtering Targets are essential materials for thin film deposition in various applications. Composed of cadmium, zinc, and sulfur, these targets offer unique properties that are crucial for both optical and electronic uses. ZnS-CdS thin films provide excellent optical transparency and possess a wide bandgap, making them ideal for optoelectronic devices such as photodetectors and solar cells. Additionally, these targets are used in semiconductor device production due to their adjustable electrical properties and compatibility with various substrates. With their superior film uniformity and precise deposition control, Cadmium Zinc Sulfide Sputtering Targets facilitate the creation of high-performance electronic and optical components.

Related Product: Zinc Sputtering Target, Tin Zinc Sputtering Target

Cadmium Zinc Sulfide Sputtering Target Specifications

Compound FormulaZnS-CdS
Molecular Weight209.756
AppearanceYellow Target
Density1.06 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Cadmium Zinc Sulfide Sputtering Target Handling Notes

Indium bonding is recommended for Cadmium Zinc Sulfide Sputtering Targets due to their inherent brittleness and low thermal conductivity, which can pose challenges during sputtering. The material’s low thermal conductivity and susceptibility to thermal shock further highlight the need for indium bonding to enhance its performance and stability.

Cadmium Zinc Sulfide Sputtering Target Application

Photovoltaic Cells: Cadmium Zinc Sulfide (CdZnS) is commonly used as a window layer in thin-film solar cells, including Cadmium Telluride (CdTe) and Copper Indium Gallium Selenide (CIGS) solar cells.

Display Technology: In display technology, CdZnS thin films are utilized in light-emitting diodes (LEDs) and liquid crystal displays (LCDs) to enhance light manipulation, resulting in improved screen performance and color accuracy.

Optoelectronic Devices: CdZnS plays a role in the fabrication of optoelectronic devices, such as photodetectors and LEDs, contributing to their efficiency and performance due to its semiconducting properties.

Quantum Dots: CdZnS is sometimes used in the synthesis of quantum dots, where it helps passivate the core material, enhancing photoluminescence and stability. These quantum dots find applications in bio-imaging and quantum computing.

Cadmium Zinc Sulfide Sputtering Target Packaging

Our Cadmium Zinc Sulfide Sputtering Targets are meticulously handled during storage and transportation to ensure they retain their quality and remain in optimal condition.

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TFM offers Cadmium Zinc Sulfide Sputtering Targets in a range of forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials, ensuring maximum density and minimal average grain sizes. Our targets are designed for use in semiconductor applications, as well as in chemical vapor deposition (CVD) and physical vapor deposition (PVD) for display and optical technologies.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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