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ST0237 Cerium Fluoride Sputtering Target, CeF3

Chemical Formula: CeF3
Catalog Number: ST0237
CAS Number: 7758-88-5
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Cerium fluoride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Cerium Fluoride Sputtering Target Description

Cerium fluoride sputtering target is composed of cerium fluoride, an ionic compound made from the rare earth metal cerium and fluorine. This material is commonly used in various thin film applications due to its unique properties. Cerium fluoride is known for its high transparency in the UV spectrum, making it ideal for optical coatings, laser optics, and other high-performance applications requiring durable and stable coatings.

CeriumFluorine, also called fluorin, is a chemical element that originated from the Latin ‘fluere’, meaning to flow. It was first mentioned in 1810 and observed by A.-M. Ampère. The isolation was later accomplished and announced by H. Moissan. “F” is the canonical chemical symbol of fluorine. Its atomic number in the periodic table of elements is 9 with a location at Period 2 and Group 17, belonging to the p-block. The relative atomic mass of fluorine is 18.9984032(5) Dalton, the number in the brackets indicating the uncertainty.

Related Product: Cerium Sputtering Target

Fluorine

Fluorine, also called fluorin, is a chemical element originated from the Latin ‘fluere’, meaning to flow. It was first mentioned in 1810 and observed by A.-M. Ampère. The isolation was later accomplished and announced by H. Moissan. “F” is the canonical chemical symbol of fluorine. Its atomic number in the periodic table of elements is 9 with location at Period 2 and Group 17, belonging to the p-block. The relative atomic mass of fluorine is 18.9984032(5) Dalton, the number in the brackets indicating the uncertainty.

Cerium Fluoride Sputtering Target Specification

Compound FormulaCeF3
AppearanceWhite Solid
Melting Point1460 °C
Boiling Point2300 °C
Density6.16 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Cerium Fluoride Sputtering Target Bonding Service

Specialized bonding services for Cerium fluoride Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Packing

Cerium fluoride sputter targets are meticulously tagged and labeled externally to ensure easy identification and stringent quality control. We take exceptional care in handling and packaging to prevent any potential damage during storage or transportation, maintaining the integrity and quality of the product.

Get Contact

TFM offers Cerium fluoride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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