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Cerium Strontium Ferrite Sputtering Target, Ce₀.₂Sr₀.₈Fe₀.₈₂

Cerium Strontium Ferrite (Ce₀.₂Sr₀.₈Fe₀.₈₂) Sputtering Target

Introduction

The Cerium Strontium Ferrite (Ce₀.₂Sr₀.₈Fe₀.₈₂) Sputtering Target is a precisely engineered perovskite oxide designed for advanced thin-film deposition. With a finely tuned Ce/Sr/Fe ratio, this compound delivers a balance of ionic and electronic conductivity, making it an ideal material for energy conversion devices, magnetic thin films, and oxide electronic applications.

Detailed Description

Ce₀.₂Sr₀.₈Fe₀.₈₂ is a mixed-valence oxide with a distorted perovskite structure. The substitution of cerium and strontium ions in the ferrite lattice tailors its electronic configuration, improving its redox stability and catalytic efficiency.
Produced through solid-state sintering or chemical co-precipitation, this sputtering target features:

  • High density and homogeneity for stable sputtering rates.

  • Controlled oxygen stoichiometry, minimizing secondary phases.

  • Excellent adhesion and surface smoothness, ensuring uniform thin-film quality.

Each target undergoes precision machining and polishing to ensure dimensional accuracy and compatibility with commercial magnetron sputtering systems. Bonding to copper or indium backing plates is available upon request for enhanced thermal performance.

Applications

Ce₀.₂Sr₀.₈Fe₀.₈₂ thin films are used in various research and industrial coating processes, including:

  • Solid Oxide Fuel Cells (SOFCs) as cathode or interlayer materials.

  • Oxygen-permeable membranes and catalytic electrodes.

  • Spintronic and magnetic oxide devices.

  • Gas sensors and resistive switching memory films.

  • Electrocatalytic coatings for renewable energy and environmental technologies.

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaCe₀.₂Sr₀.₈Fe₀.₈₂Optimized for mixed conductivity and stability
Purity99.9% – 99.99%Ensures reproducible thin film chemistry
Density≥ 6.0 g/cm³Higher density improves film uniformity
Diameter25 – 200 mm (custom sizes)Fits most sputtering systems
Thickness3 – 6 mmBalances film yield and target life
BondingIndium, elastomer, or copper backingEnhances thermal dissipation
FormDisc, rectangular, or custom geometrySuitable for R&D and industrial tools

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Ce₀.₂Sr₀.₈Fe₀.₈₂Balanced ionic & electronic conductivitySOFC and catalytic electrodes
La₀.₈Sr₀.₂FeO₃Higher conductivityFuel cell cathodes
Ce₀.₅Sr₀.₅FeO₃Enhanced redox stabilityOxygen membranes
SrFeO₃₋δStrong oxygen vacancy mobilityCatalytic and gas-sensing films

FAQ

QuestionAnswer
Can the Ce/Sr/Fe ratio be adjusted?Yes. The composition can be tailored for specific conductivity or catalytic needs.
Is bonding required for high-power sputtering?Indium or copper bonding is recommended for heat management above 200 W.
How are the targets packaged?Each target is vacuum-sealed, wrapped in foam, and shipped in export-safe cartons or wooden crates.
What deposition methods are compatible?DC/RF magnetron sputtering, pulsed laser deposition (PLD), and reactive sputtering.
Are custom shapes available?Yes, round, rectangular, and ring shapes can be supplied on request.

Packaging

Our Ce₀.₂Sr₀.₈Fe₀.₈₂ Sputtering Targets are meticulously labeled and vacuum-packed to ensure purity and easy identification. Anti-static materials and shock-proof packaging prevent contamination and mechanical damage during transport.

Conclusion

The Cerium Strontium Ferrite (Ce₀.₂Sr₀.₈Fe₀.₈₂) Sputtering Target offers precise compositional control and reliable sputtering performance for advanced oxide film research. Its versatility and stability make it an essential material for laboratories and production environments developing next-generation electronic and energy devices.

For detailed specifications or a quotation, please contact us at [sales@thinfilmmaterials.com].

Order Now

Ce₀.₂Sr₀.₈Fe₀.₈₂ target 99.9% Ø3"×3 mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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