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ST0187 Chromium-doped Silicon Monoxide Sputtering Target, SiO/Cr

Chemical Formula: SiO/Cr
Catalog Number: ST0187
CAS Number: 7440-47-3 | 1009
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

chromium-doped silicon monoxide  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Chromium-doped Silicon Monoxide Sputtering Target Description

Chromium-doped silicon monoxide sputtering target from TFM is an oxide sputtering material containing Cr, Si, and O.

Chromium

Chromium is a chemical element with the symbol “Cr,” originating from the Greek word ‘chroma,’ meaning color, due to its colorful compounds. It was first used before 1 AD and is notably associated with discoveries by the Terracotta Army. Chromium is positioned in Period 4, Group 6 of the periodic table, belonging to the d-block, with an atomic number of 24. The relative atomic mass of chromium is 51.9961(6) Dalton, indicating the uncertainty in measurement.

Related Product: Chromium Sputtering Target

SiliconSilicon is a chemical element with the symbol “Si,” originating from the Latin words ‘silex’ or ‘silicis,’ meaning flint. It was first identified in 1824 by J. Berzelius, who also succeeded in isolating it. Silicon is positioned at atomic number 14 in the periodic table, located in Period 3 and Group 14, within the p-block. It has a relative atomic mass of 28.0855(3) Dalton, with the number in brackets indicating the uncertainty. Silicon is a crucial element in the electronics industry, particularly in the production of semiconductors.

Related Products: N-type Silicon Sputtering Target, P-type Silicon Sputtering Target

OxygenOxygen is a chemical element with the symbol “O,” originating from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first mentioned in 1771 and observed by W. Scheele, who also accomplished and announced its isolation. Oxygen has an atomic number of 8 in the periodic table, located in Period 2 and Group 16, within the p-block. The relative atomic mass of oxygen is 15.9994(3) Dalton, with the number in brackets indicating the uncertainty. Oxygen is essential for life, playing a crucial role in respiration and combustion processes.

Chromium-doped Silicon Monoxide Sputtering Target Packaging

Our chromium-doped silicon monoxide sputtering target is clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care to prevent any damage during storage and transportation, ensuring that the product remains in optimal condition for use.

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TFM offers chromium-doped silicon monoxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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