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ST0902 Cobalt Chromium Iron Nickel Manganese High-Entropy Alloy (HEA) Sputtering Target, Co/Cr/Fe/Ni/Mn

Catalog No.ST0902
Chemical FormulaCo/Cr/Fe/Ni/Mn
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

CoCrFeNiMn High-Entropy Alloy (HEA) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target Handling Notes

Indium bonding is recommended for CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Targets due to certain characteristics that make them less suitable for direct sputtering, such as brittleness and low thermal conductivity. The low thermal conductivity of this material makes it susceptible to thermal shock during the sputtering process, and indium bonding helps mitigate these issues by providing better thermal management and structural support.

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target Application

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target is widely employed in various applications, including the production of electronic devices, photovoltaic cells, and protective coatings for various surfaces. This material is valued for its unique combination of elements, which provides exceptional properties such as high strength, excellent corrosion resistance, and thermal stability, making it suitable for advanced technological applications.

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target Packaging

Our CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Targets are carefully handled during storage and transportation to ensure they remain in their original condition. We take all necessary precautions to protect these high-quality materials from any potential damage, maintaining their integrity and performance for optimal use in your applications.

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TFM offers CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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