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ST0895 Cobalt Iron Boron Sputtering Target, Co/Fe/B

Chemical FormulaCo/Fe/B
Catalog No.ST0895
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Cobalt Iron Boron sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Cobalt Iron Boron Sputtering Target Description

The Cobalt Iron Boron Sputtering Target is created by combining cobalt, iron, and boron in a specific ratio, then compacting and sintering the mixture into a solid target. This target is placed inside a sputtering system, where it is bombarded with high-energy ions. This bombardment releases atoms from the target, which then deposit onto a substrate to form a thin film.

Sputtering is a technique used to deposit thin films by ejecting atoms from a target material onto a substrate. The CoFeB sputtering target is particularly used to produce thin-film magnetic devices, such as magnetic tunnel junctions (MTJs), which are crucial in spintronics and magnetic storage technologies.

Cobalt Iron Boron Sputtering Target Specifications

Compound FormulaCo/Fe/B
AppearanceMetallic target
Molecular Weight135.943
Density0.986 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Cobalt Iron Boron Sputtering Target Handling Notes

Indium bonding is recommended for the Cobalt Iron Boron Sputtering Target due to its properties that can make sputtering challenging, such as brittleness and low thermal conductivity. The target’s low thermal conductivity also makes it prone to thermal shock, so indium bonding helps improve its performance and stability during the sputtering process.

Cobalt Iron Boron Sputtering Target Application

The Cobalt Iron Boron Sputtering Target is widely utilized in applications including optical coatings, electronic devices, energy storage, and catalysts. Its precise composition and manufacturing process ensure a uniform and controlled deposition, resulting in high-quality thin films with the desired properties.

Cobalt Iron Boron Sputtering Target Packaging

We handle our Cobalt Iron Boron Sputtering Targets with great care during storage and transportation to ensure they maintain their quality and remain in their original condition.

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TFM offers Cobalt Iron Boron Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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