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Cobalt Manganese Silicon Sputtering Target

Cobalt Manganese Silicon Sputtering Target, Co₂MnSi

Cobalt Manganese Silicon Sputtering Target

Introduction

The Cobalt Manganese Silicon Sputtering Target (Co₂MnSi) is a Heusler alloy widely studied for its half-metallic ferromagnetic properties, making it an important material in spintronics and magnetic thin film research. With its ordered crystal structure and high spin polarization, Co₂MnSi is ideal for applications where electron spin control and magnetic stability are essential.

Detailed Description

Co₂MnSi belongs to the family of full Heusler alloys, known for their unique combination of metallic conductivity and ferromagnetism. When used as a sputtering target, this material enables the fabrication of thin films with desirable properties such as:

  • High spin polarization for spintronic devices.

  • Stable L2₁ crystal structure, improving film uniformity.

  • High Curie temperature, ensuring reliable performance under thermal stress.

  • Tailorable composition to adjust magnetic and electronic behavior.

To ensure efficient thin film deposition, Co₂MnSi sputtering targets are produced with high density, fine grain structure, and optional backing plates for heat dissipation.

Applications

The Co₂MnSi sputtering target is primarily applied in:

  • Spintronics and magnetoresistive random-access memory (MRAM).

  • Magnetic tunnel junctions (MTJs) for read/write heads.

  • Quantum devices exploring half-metallic ferromagnets.

  • Functional coatings in electronics and sensors.

  • Academic and industrial research into Heusler alloys.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Ensures minimal contamination in functional films
Diameter25 – 150 mm (customizable)Matches magnetron sputtering system holders
Thickness3 – 6 mmInfluences target life and deposition rate
BondingIndium / Copper backingEnhances heat transfer and stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Cobalt Manganese SiliconHigh spin polarization, Heusler alloySpintronic devices
Cobalt Iron AluminumTunable ferromagnetismMRAM, sensors
Nickel Manganese GalliumShape memory propertiesActuators, smart materials

FAQ

QuestionAnswer
Can the stoichiometry be adjusted?Yes, composition can be modified for research requirements.
Is bonding necessary?Not always, but copper or titanium backing improves target stability in long sputtering runs.
How are the targets packaged?Each target is vacuum-sealed and cushioned with protective foam in export-ready crates.
What sputtering techniques are suitable?DC, RF, and magnetron sputtering systems.
Can custom dimensions be supplied?Yes, we provide tailored diameters, thicknesses, and bonding options.

Packaging

Every Cobalt Manganese Silicon Sputtering Target is vacuum-packed, externally labeled for traceability, and shipped in foam-padded, export-compliant packaging to ensure safe delivery.

Conclusion

The Co₂MnSi sputtering target is a cutting-edge material for advanced magnetic and electronic applications. With its half-metallic ferromagnetic properties and customizable specifications, it is an excellent choice for both R&D and industrial thin film deposition.

For detailed specifications and a quotation, please contact us at [sales@thinfilmmaterials.com].

Order Now

Co₂MnSi target 3N 50%Co/25%Mn/25%Si at% ø50.8×1mm Cu B/Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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