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ST0903 Cobalt Nickel Vanadium High-Entropy Alloy (HEA) Sputtering Target, Co/Ni/V

Catalog No.ST0903
Chemical FormulaCo/Ni/V
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

CoNiV High-Entropy Alloy (HEA) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

CoNiV High-Entropy Alloy (HEA) Sputtering Target Description

CoNiV High-Entropy Alloy (HEA) Sputtering Target is a specialized material utilized in the sputter deposition process, which is integral to industries such as semiconductor manufacturing, thin-film coating, and the production of electronic devices and photovoltaic cells. Sputter deposition involves the ejection of atoms from a solid target material due to high-energy ion bombardment, with these atoms then depositing as a thin film on a substrate.

High-entropy alloys (HEAs) like CoNiV are composed of multiple elements in nearly equal proportions, giving them unique properties. These alloys are renowned for their exceptional mechanical strength, corrosion resistance, and thermal stability, making them highly suitable for demanding industrial applications. The specific combination of cobalt (Co), nickel (Ni), and vanadium (V) in the CoNiV HEA sputtering target enhances its performance in thin-film deposition, ensuring precise and uniform coatings that meet the rigorous standards of advanced manufacturing processes.

CoNiV High-Entropy Alloy (HEA) Sputtering Target Handling Notes

Indium bonding is recommended for CoNiV High-Entropy Alloy (HEA) Sputtering Targets due to certain characteristics of the material that make it less suitable for direct sputtering. The CoNiV HEA has a low thermal conductivity, making it prone to thermal shock, which can lead to damage during the sputtering process. Additionally, the material’s brittleness poses challenges in maintaining the integrity of the sputtering target under high-energy bombardment.

Indium bonding helps to mitigate these issues by providing a more flexible and thermally conductive interface between the sputtering target and the backing plate, thereby improving the overall durability and performance of the target during the sputtering process.

CoNiV High-Entropy Alloy (HEA) Sputtering Target Application

The CoNiV High-Entropy Alloy (HEA) Sputtering Target is vital in the production of electronic devices, photovoltaic cells, and surface coatings. Its unique properties, such as high mechanical strength, corrosion resistance, and thermal stability, make it suitable for advanced applications where performance and durability are critical.

In electronic devices, it helps in depositing thin films that are essential for the functionality and reliability of components. For photovoltaic cells, it contributes to creating efficient thin-film solar cells that harness solar energy. In surface coatings, it provides protective and functional layers that enhance the performance and longevity of various products.

CoNiV High-Entropy Alloy (HEA) Sputtering Target Packaging

Our CoNiV High-Entropy Alloy (HEA) Sputtering Targets are meticulously managed during storage and transportation to maintain their quality and ensure they arrive in pristine condition.

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TFM offers CoNiV High-Entropy Alloy (HEA) Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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