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Copper Aluminum Oxide Sputtering Target

ST0144 Copper Aluminum Oxide Sputtering Target, CuAlO2

Chemical Formula: CuAlO2
Catalog Number: ST0144
CAS Number: 12250-93-0
Purity: 99.9%, 99.95%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Copper Aluminum Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Copper Aluminum Oxide Sputtering Target Description

The Copper Aluminum Oxide Sputtering Target from TFM is an oxide sputtering material with the chemical formula CuAlO2.

CopperCopper is a chemical element whose name originates from the Old English word “coper,” derived from the Latin ‘Cyprium aes,’ meaning metal from Cyprus. It has been used since as early as 9000 BC and was discovered by people from the Middle East. The chemical symbol for copper is “Cu,” and its atomic number is 29. Copper is located in Period 4, Group 11 of the periodic table, within the d-block. Its relative atomic mass is 63.546(3) Dalton, with the number in brackets indicating the measurement uncertainty. Copper is renowned for its excellent electrical and thermal conductivity, as well as its resistance to corrosion.

Related Product: Copper (Cu) Sputtering Target

Aluminium

Aluminium, also known as aluminum, is a chemical element named after the Latin word for alum, ‘alumen,’ meaning bitter salt. It was first mentioned in 1825 and observed by H.C. Ørsted, who also accomplished and announced its isolation. The chemical symbol for aluminium is “Al,” and its atomic number is 13. Aluminium is located in Period 3, Group 13 of the periodic table, within the p-block. Its relative atomic mass is 26.9815386(8) Dalton, with the number in brackets indicating the measurement uncertainty. Aluminium is known for its lightweight, high strength, and excellent corrosion resistance, making it widely used in various industries, including aerospace, construction, and packaging.

Related Product: Aluminium (Al) Sputtering Target

OxygenOxygen is a chemical element whose name is derived from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first mentioned and observed by W. Scheele in 1771, who also later accomplished and announced its isolation. The chemical symbol for oxygen is “O,” and its atomic number is 8. Oxygen is located in Period 2, Group 16 of the periodic table, within the p-block. Its relative atomic mass is 15.9994(3) Dalton, with the number in parentheses indicating the measurement uncertainty. Oxygen is crucial for respiration in most life forms and plays a vital role in combustion, oxidation, and various chemical reactions.

Copper Aluminum Oxide Sputtering Target Application

The Copper Aluminum Oxide Sputtering Target is utilized in a variety of applications, including thin film deposition, decorative coatings, semiconductors, displays, LEDs, and photovoltaic devices. It is also essential for functional coatings, the optical information storage industry, glass coatings for automotive and architectural purposes, and optical communication systems, among other fields.

Copper Aluminum Oxide Sputtering Target Packing

Our Copper Aluminum Oxide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain strict quality control. We take extensive precautions to prevent any damage during storage and transportation, ensuring the highest standards of product integrity upon delivery.

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TFM offers Copper Aluminum Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.
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CuAlO2 target 3N ø2"*6mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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