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ST0975 Copper Manganese Nickel Sputtering Target, CuMnNi

Chemical FormulaCuMnNi
Catalog No.ST0975
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Known for their exceptional purity and competitive pricing, Copper-Manganese-Nickel sputtering targets from TFM exemplify our commitment to excellence. Drawing on our extensive expertise in materials science, we ensure outstanding performance and reliability through precise craftsmanship in the production of these targets.

MSDS File

Copper Manganese Nickel Sputtering Target Description

The Copper-Manganese-Nickel sputtering target is a specialized material used in sputtering, a technique for depositing thin films onto substrates. Composed of a blend of manganese, nickel, and copper, this target is essential in the sputtering process, where ions are directed at the target to release atoms or particles. These particles then deposit onto a substrate, forming a thin film. Copper-Manganese-Nickel sputtering targets are utilized across various industries, including semiconductor manufacturing, optical coatings, and thin-film technology, where their unique metal combination meets specific performance needs.

Related Product: Manganese Sputtering Target, Manganese Oxide Sputtering Target

Copper Manganese Nickel Sputtering Target Specifications

Compound FormulaCuMnNi
Molecular Weight230.62
AppearanceSilver Metallic Target
Melting Point960-1020℃
Density8.4 g/cm3
Electrical Resistivity43-48 µΩ·cm
Tensile Strength300-600 MPa
Thermal Conductivity22 W/m/K
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Copper Manganese Nickel Sputtering Target Handling Notes

Indium bonding is recommended for Copper-Manganese-Nickel sputtering targets due to their specific properties, such as brittleness and low thermal conductivity, which can affect sputtering performance. This material’s low thermal conductivity and susceptibility to thermal shock make indium bonding a suitable solution to enhance stability and effectiveness during the sputtering process.

Copper Manganese Nickel Sputtering Target Application

Semiconductor Manufacturing: Copper-Manganese-Nickel sputtering targets are essential in the semiconductor industry for thin film deposition, where they are used to create thin films for electronic components and integrated circuits.

Optical Coatings: These targets are crucial for preparing optical coatings, producing thin films with specific optical properties that are used in a variety of optical devices and applications.

Magnetic Film Preparation: Leveraging the magnetic properties of nickel and copper, Copper-Manganese-Nickel sputtering targets are employed in the creation of magnetic films for applications such as magnetic storage and sensors.

Electronics: In electronics manufacturing, these targets are widely used to produce thin films that enhance the performance and stability of electronic components.

Copper Manganese Nickel Sputtering Target Packaging

Our Copper-Manganese-Nickel sputtering targets are meticulously managed during storage and transportation to ensure they maintain their quality and arrive in optimal condition.

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TFM’s Copper-Manganese-Nickel sputtering targets are offered in a range of forms, purities, and sizes. We focus on producing high-purity physical vapor deposition (PVD) materials with maximum density and minimal average grain sizes. These targets are ideal for use in semiconductor applications, as well as in chemical vapor deposition (CVD) and PVD for display and optical technologies.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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