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ST0277 Copper Sulfide Sputtering Target, CuS

Chemical Formula: CuS
Catalog Number: ST0277
CAS Number: 1317-40-4
Purity: 99.9%, 99.95%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Copper Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Copper Sulfide Sputtering Target Description

Copper sulfide sputtering targets are ceramic materials composed of copper (Cu) and sulfur (S). These targets are used in various thin film deposition processes, including semiconductor manufacturing, display technology, and photovoltaic devices. Copper sulfide thin films are valued for their electrical properties and are often used in applications requiring p-type semiconductors or as part of multi-layer structures for solar cells and other electronic devices.

CopperCopper is a chemical element with the symbol “Cu,” derived from the Old English word “coper,” which itself comes from the Latin term “Cyprium aes,” meaning “metal from Cyprus.” Copper has been used by humans since approximately 9000 BC, with early uses traced back to the Middle East. It is found in the periodic table at atomic number 29, situated in Period 4 and Group 11, belonging to the d-block of transition metals. Copper has a relative atomic mass of 63.546(3) Dalton, with the number in brackets indicating the uncertainty in this value.

Related Product: Copper Sputtering Target

SulfurSulfur, also known as sulphur, is a chemical element that has been known and used since ancient times, with its name possibly derived from the Sanskrit word “sulvere” or the Latin “sulfurium.” It was widely recognized before 2000 BC and was notably used by ancient Chinese and Indian civilizations. The chemical symbol for sulfur is “S,” and it is found in the periodic table at atomic number 16, located in Period 3 and Group 16, part of the p-block elements. The relative atomic mass of sulfur is 32.065(5) Dalton, with the number in brackets indicating the uncertainty in this measurement.

Copper Sulfide Sputtering Target Specification

Material TypeCopper Sulfide
SymbolCuS
Color/AppearanceBlack target
Melting Point 500 °C (932 °F)
Density 4.6 g/cm3
SputterRF, RF-R
Type of BondIndium, Elastomer

Copper Sulfide Sputtering Target Target Bonding

Specialized bonding services for Copper Sulfide Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Packing

Our copper sulfide sputtering targets are carefully tagged and labeled externally to ensure efficient identification and quality control. We take great care in handling and packaging to prevent any damage during storage or transportation, ensuring that the product arrives in optimal condition.

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TFM offers Copper Sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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