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Gadolinium-Doped Ceria (GDC) Sputtering Target

Gadolinium-Doped Ceria (GDC) Sputtering Target

Introduction

The Gadolinium-Doped Ceria (GDC) Sputtering Target from Thin Film Materials (TFM) is a high-performance ceramic target used in thin film deposition. GDC is a solid solution of cerium oxide (CeO₂) doped with gadolinium oxide (Gd₂O₃), which enhances ionic conductivity by introducing oxygen vacancies into the lattice. Thanks to its exceptional oxygen ion transport properties, GDC is widely employed in solid oxide fuel cells (SOFCs), sensors, and energy storage devices.

Detailed Description

Our GDC sputtering targets are fabricated with high density and controlled microstructure, ensuring uniform sputtering behavior and reproducible thin film properties. Typical compositions range from 10–20 mol% Gd-doping in ceria, with purities of 99.9% (3N) to 99.99% (4N).

  • Chemical Formula: Ce₀.₉Gd₀.₁O₂₋ₓ (typical 10 mol% Gd)

  • Appearance: Pale yellow to light green ceramic

  • Density: ~7.2 g/cm³

  • Crystal Structure: Cubic fluorite (stabilized by Gd³⁺ substitution)

TFM provides GDC sputtering targets in standard disc, rectangular, and step formats. Bonding services with copper or titanium backing plates are available to improve heat dissipation, mechanical stability, and target longevity. Custom sizes and doping ratios can be produced on request.

Applications

Gadolinium-Doped Ceria sputtering targets are widely used in:

  • Solid Oxide Fuel Cells (SOFCs): electrolyte and buffer layers to enhance ionic conductivity

  • Gas sensors: oxygen and hydrogen sensing devices

  • Catalysis: films for catalytic converters and oxygen storage systems

  • Photovoltaics and optoelectronics: buffer layers in solar cells and functional coatings

  • R&D: advanced studies of oxygen ion conductors and ceramic thin films

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%High purity ensures low defect levels in films
Doping Level10–20 mol% GdAdjusts ionic conductivity and stability
Diameter25 – 150 mm (custom up to 300 mm)Fits a wide range of sputtering systems
Thickness3 – 6 mmControls sputtering efficiency and film uniformity
Bonding OptionsIndium / ElastomerImproves thermal transfer and adhesion
Backing PlateCopper / TitaniumEnsures mechanical stability during sputtering

Comparison with Related Materials

MaterialKey AdvantageTypical Application
GDC (CeO₂:Gd₂O₃)High ionic conductivity at low tempSOFC electrolytes, sensors
YSZ (Yttria-Stabilized Zirconia)Stable at higher temperaturesSOFC electrolytes
SDC (Samarium-Doped Ceria)Alternative oxygen ion conductorFuel cells, catalysis

FAQ

QuestionAnswer
Can the Gd-doping ratio be customized?Yes, TFM offers 10–20 mol% Gd doping or as specified by customer needs.
Do you offer bonded targets?Yes, bonding with indium or elastomer to Cu/Ti backing plates is available.
How are GDC targets packaged?Each target is vacuum-sealed, cushioned with foam, and shipped in export-safe cartons or crates.
Which industries use GDC most?Energy (SOFC), catalysis, sensor technology, and R&D institutions.

Packaging

All Gadolinium-Doped Ceria sputtering targets are vacuum-sealed, protected with foam, and packed in export-safe cartons or wooden crates. This ensures safe transport, long-term stability, and preserved quality.

Conclusion

The Gadolinium-Doped Ceria (GDC) Sputtering Target from TFM provides high ionic conductivity, excellent stability, and reliable thin film performance. With customizable dimensions, doping levels, and bonding services, our GDC targets meet the exacting needs of energy, electronics, and research applications.

For detailed specifications, pricing, and custom solutions, please contact us at sales@thinfilmmaterials.com.

Order Now

Ce₀.₉Gd₀.₁ Target 99.99% ø50.8×6mm Indium Bonded Cu B/Plate 1.5mm, GDC10 target 4"×6mm (10 mol% Gd₂O₃ in CeO₂), GDC20 target 4"×6mm (20 mol% Gd₂O₃ in CeO₂) Qty 2, GDC target Ce0.9Gd0.1O2-x 4N ø50.8×6mm Single Phase

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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