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Gallium Nitride Target

Gallium Nitride Sputtering Target

Chemical Formula: GaN
CAS Number: 25617-97-4
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Gallium Nitride sputtering targets are offered in multiple shapes, sizes, and purity grades. Thin Film Materials (TFM) manufactures and supplies high-density GaN targets with stable sputtering performance and competitive pricing for semiconductor and optoelectronic thin film deposition.

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Gallium Nitride (GaN) Sputtering Target

The Gallium Nitride (GaN) Sputtering Target from Thin Film Materials (TFM) is a high-purity ceramic target designed for thin film deposition in semiconductors, optoelectronics, and power devices. GaN is a wide bandgap semiconductor known for its high breakdown voltage, excellent thermal stability, and superior electron mobility, making it a key material in next-generation electronic and photonic applications.

Detailed Description

TFM produces GaN sputtering targets with high density, fine grain structure, and typical purities of 99.9% (3N) to 99.99% (4N). These targets deliver stable sputtering performance and uniform thin films.

  • Chemical Formula: GaN

  • Appearance: Black to dark gray ceramic

  • Density: ~6.15 g/cm³

  • Melting Point: ~2,500 °C (decomposes before melting in air)

  • Crystal Structure: Wurtzite (hexagonal)

We supply GaN targets in standard disc, rectangular, and step geometries. For improved reliability, indium or elastomer bonding onto copper or titanium backing plates is available. Custom sizes and compositions can be tailored to specific deposition systems.

Applications

Gallium Nitride sputtering targets are widely used in:

  • Semiconductors: high-electron-mobility transistors (HEMTs) and power electronics

  • Optoelectronics: LEDs, laser diodes, and photodetectors

  • RF and microwave devices: high-frequency communication components

  • Solar energy: thin film photovoltaic and photoelectrochemical cells

  • Research: quantum devices, wide bandgap semiconductor studies

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Ensures high-quality films with minimal defects
Diameter25 – 150 mm (custom up to 300 mm)Fits a wide range of sputtering systems
Thickness3 – 6 mmDetermines sputtering efficiency
Bonding OptionsIndium / ElastomerImproves thermal management and adhesion
Backing PlateCopper / TitaniumProvides structural support and heat transfer

Comparison with Related Materials

MaterialKey AdvantageTypical Application
GaNWide bandgap, high electron mobilityPower devices, LEDs
SiCThermal stability, hardnessPower electronics, coatings
ZnOTransparent and low-costDisplays, optoelectronics

FAQ

QuestionAnswer
Can GaN sputtering targets be customized?Yes, TFM offers custom diameters, thicknesses, and bonded targets.
Do you provide bonding services?Yes, indium and elastomer bonding are available for Cu/Ti backing plates.
How are GaN targets packaged?Vacuum-sealed, foam-protected, and shipped in export-safe cartons or crates.
Which industries use GaN targets most?Semiconductors, optoelectronics, energy, and R&D.

Packaging

All Gallium Nitride sputtering targets are vacuum-sealed and securely packaged to prevent contamination, oxidation, and damage during shipping. Export-approved cartons or wooden crates ensure safe delivery worldwide.

Conclusion

The Gallium Nitride (GaN) Sputtering Target from TFM delivers excellent reliability, high purity, and customizable specifications for advanced thin film applications. With professional bonding services and stable performance, our GaN targets meet the needs of both researchers and industrial manufacturers.

For detailed specifications, pricing, and custom solutions, please contact us at sales@thinfilmmaterials.com.

Order Now

GaN Target 4N ø25.4×3mm, GaN Target 4N ø25.4×3.18mm, GaN Target 4N ø101.6*6mm Indium Bonded 3mm Cu B/Plate, GaN Target 4N ø25.4*3.18mm, GaN Target 4N ø25.4*3mm, GaN Target 4N ø101.6*6mm Indium Bonded 3mm Cu B/Plate, GaN target 4N 2"×3 mm, GaN target 4N 2"×6 mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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