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VD0846A Gallium Telluride Pellet Evaporation Material (GaTe)

Material TypeGallium Telluride
SymbolGaTe
Color/Appearanceblack pieces
Melting Point (°C)824
Theoretical Density (g/cc)5.44
Z Ratio
E-Beam
Thermal Evaporation TechniquesBoat:  –
Crucible:  –
E-Beam Crucible Liner Material
Temp. (°C) for Given Vap. Press. (Torr)
Comments

Gallium Telluride Pellet Evaporation Material

TFM offers high-purity Gallium Telluride Pellet Evaporation Material, specifically engineered for thin-film deposition in semiconductor, optoelectronic, and infrared applications. Composed of gallium (Ga) and tellurium (Te), this material is widely used in infrared detectors, thermoelectric devices, and advanced photonic applications. Gallium telluride (Ga2Te3) exhibits excellent semiconducting properties, making it a key material for infrared optics, quantum electronics, and next-generation photovoltaic technologies.

This material is designed for thermal evaporation and electron beam (E-beam) evaporation, ensuring uniform film thickness, high purity, and strong adhesion to substrates, making it ideal for cutting-edge research and industrial applications.

Key Features and Advantages

  • High Infrared Absorption: Ideal for infrared detection and imaging applications, enhancing sensor sensitivity.

  • Superior Thermoelectric Properties: Supports high-efficiency thermoelectric materials, essential for power generation and cooling systems.

  • Excellent Semiconductor Characteristics: Features a direct bandgap, making it suitable for optoelectronic devices such as lasers, LEDs, and photodetectors.

  • High Purity & Precise Deposition: Ensures uniform thin-film coatings, minimizing defects and improving device performance.

  • Customizable Composition: TFM offers tailored specifications to meet the specific needs of advanced research and industrial applications.

Applications

  • Infrared Sensors & Imaging: Gallium telluride is used in infrared imaging systems, night vision technology, and thermal sensors for military, medical, and industrial applications.

  • Thermoelectric Devices: Applied in high-performance thermoelectric materials, enabling energy conversion for cooling systems and power generation.

  • Optoelectronics & Photonics: Utilized in photodetectors, laser diodes, and infrared photonic devices, essential for fiber optics and telecommunication systems.

  • Semiconductor Research: Plays a crucial role in emerging semiconductor technologies, supporting next-generation electronic components.

  • Thin-Film Deposition: Ensures high-quality coatings for specialized optical and electronic applications, offering superior performance and stability.

Industry Impact and Customization

TFM’s Gallium Telluride Pellet Evaporation Material is a vital component in infrared sensing, optoelectronic devices, and semiconductor research. With high purity, precise deposition control, and customizable compositions, TFM ensures its materials meet the demanding needs of cutting-edge research and industrial manufacturing.

By providing excellent semiconductor properties, superior thermoelectric performance, and high infrared absorption, TFM’s Gallium Telluride Pellet Evaporation Material is an essential material for advancing infrared technology, energy-efficient thermoelectric systems, and high-performance optoelectronic applications.

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FAQ

  • They are high‐purity substances (e.g. metals, alloys, or compounds) used in thermal or electron‐beam evaporation processes to form thin films on substrates.

  • Typically, they’re processed into a form (often ingots, pellets, or wires) that can be efficiently vaporized. Preparation emphasizes high purity and controlled composition to ensure film quality.

  • Thermal evaporation and electron-beam (e-beam) evaporation are the two main techniques, where material is heated (or bombarded with electrons) until it vaporizes and then condenses on the substrate.

  • Thermal evaporation heats the material directly (often using a resistive heater), while e-beam evaporation uses a focused electron beam to locally heat and vaporize the source material—each method offering different control and energy efficiency.

  • Key parameters include source temperature, vacuum level, deposition rate, substrate temperature, and the distance between the source and the substrate. These factors influence film uniformity, adhesion, and microstructure.

  • Evaporation generally produces high-purity films with excellent control over thickness, and it is especially suitable for materials with relatively low melting points or high vapor pressures.

  • Challenges include issues with step coverage (due to line-of-sight deposition), shadowing effects on complex topographies, and possible re-evaporation of material from the substrate if temperature isn’t properly controlled.

  • Common evaporation materials include noble metals (e.g., gold, silver), semiconductors (e.g., silicon, germanium), metal oxides, and organic compounds—each chosen for its specific optical, electrical, or mechanical properties.

  • Selection depends on desired film properties (conductivity, optical transparency, adhesion), compatibility with the evaporation process, and the final device application (semiconductor, optical coating, etc.).

  • Optimizing substrate temperature, deposition rate, and chamber vacuum are critical for ensuring that the film adheres well and forms the intended microstructure without defects.

  • Troubleshooting may involve checking the source material’s purity, ensuring stable source temperature, verifying the vacuum level, adjusting the substrate’s position or temperature, and monitoring deposition rate fluctuations.

While evaporation tends to yield very high purity films with excellent thickness control, it is limited by its line-of-sight nature. In contrast, sputtering can deposit films more uniformly on complex surfaces and is more versatile for a broader range of materials.

 

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