Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
6-gesbsete-target-removebg-preview-1

ST0973 Germanium Antimony Selenium Tellurium Sputtering Target, GeSbSeTe

Chemical FormulaGeSbSeTe
Catalog No.ST0973
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) sputtering targets from TFM are renowned for their superior purity and competitive pricing. Drawing on our extensive expertise in materials science, we guarantee exceptional performance and reliability, thanks to our rigorous craftsmanship and attention to detail in target production.

MSDS File

Germanium Antimony Selenium Tellurium Sputtering Target Description

Crafted with meticulous attention to detail and using high-quality materials, the Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) sputtering targets from TFM deliver superior performance and dependability.

These sputtering targets are composed of Germanium, Antimony, Selenium, and Tellurium, providing excellent electrical conductivity, a high melting point, and remarkable chemical stability. Their elevated refractive index also makes them highly suitable for various optical applications. With our commitment to precision and quality, you can trust these targets to enhance your thin-film deposition processes effectively.

Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target

Germanium Antimony Selenium Tellurium Sputtering Target Specifications

Compound FormulaGeSbSeTe
AppearanceSilvery gray metallic Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Antimony Selenium Tellurium Sputtering Target Handling Notes

Indium bonding is recommended for Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) sputtering targets due to their specific characteristics, such as brittleness and low thermal conductivity, which can pose challenges during sputtering. These materials exhibit low thermal conductivity and are prone to thermal shock, making indium bonding a suitable solution to enhance their performance and reliability in sputtering applications.

Germanium Antimony Selenium Tellurium Sputtering Target Application

Optical Storage Device Manufacturing: Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) sputtering targets are essential in the production of optical storage devices, such as optical discs and phase change memories, thanks to their unique electrical properties and excellent chemical stability.

Phase Change Memory: In phase change memory applications, GeSbSeTe is a crucial material that facilitates high-density, rapid information storage, and efficient read/write operations in electronic devices.

Optical Coatings: The high refractive index of Germanium-Antimony-Selenium-Tellurium sputtering targets makes them ideal for creating optical coatings, particularly for manufacturing films with specialized optical properties.

Semiconductor Industry: These sputtering targets also have significant applications in semiconductor manufacturing, where they are used in thin film deposition processes to produce high-performance films for various electronic devices.

Germanium Antimony Selenium Tellurium Sputtering Target Packaging

Our Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) sputtering targets are meticulously managed throughout storage and transportation to maintain their quality and ensure they arrive in pristine condition.

Get Contact

TFM’s Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) sputtering targets are offered in a range of forms, purities, and sizes. We specialize in manufacturing high-purity physical vapor deposition (PVD) materials, ensuring the highest density and smallest average grain sizes. These targets are ideal for semiconductor applications, as well as for chemical vapor deposition (CVD) and PVD in display and optical technologies.

Reviews

There are no reviews yet.

Be the first to review “ST0973 Germanium Antimony Selenium Tellurium Sputtering Target, GeSbSeTe”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top