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Germanium Antimony Tellurium Doped Carbon C-GST Target

ST0881 Germanium Antimony Tellurium Doped Carbon C-GST Target

Catalog Number: ST0881
Chemical Formula: Ge/Sb/Te/C
Purity: 99.99%+
Shape: Planar

Aluminum  ficatio sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Germanium Antimony Tellurium Doped Carbon (C-GST) Sputtering Targets are advanced phase-change material targets engineered for next-generation non-volatile memory, neuromorphic computing, and reconfigurable photonic devices. Carbon doping in GST systems is widely adopted to improve data retention, thermal stability, and cycling endurance, making C-GST a preferred material for high-performance phase-change thin films.

Detailed Description

C-GST sputtering targets are fabricated by precisely combining high-purity Ge–Sb–Te alloy with a controlled amount of carbon dopant. Uniform carbon distribution is critical, as it directly influences crystallization kinetics, resistance drift, and film stability. To achieve this, advanced alloying and consolidation techniques are employed to ensure compositional homogeneity and high target density.

Compared with conventional GST targets, carbon-doped GST targets exhibit enhanced amorphous phase stability and reduced atomic diffusion during repeated phase transitions. These improvements translate into longer device lifetimes and more stable electrical characteristics. Targets are finished to tight flatness and thickness tolerances to support uniform erosion and consistent sputtering behavior.

C-GST targets are typically supplied bonded to copper backing plates for efficient heat dissipation during high-power magnetron sputtering, though unbonded options are available for smaller sizes or lower power densities. Carbon content, GST stoichiometry, and target geometry can all be customized to meet specific device or research requirements.

Applications

  • Phase-change memory (PCM) and non-volatile memory devices

  • Neuromorphic and in-memory computing research

  • Reconfigurable photonic and optical switching devices

  • Advanced semiconductor R&D and materials science

  • Thin film studies of chalcogenide phase-change materials

Technical Parameters

ParameterTypical Value / RangeImportance
MaterialCarbon-Doped Ge–Sb–Te (C-GST)Enhanced phase-change performance
GST CompositionGe–Sb–Te (custom ratios)Tunes switching & resistivity
Carbon ContentCustomized (typically low at.% levels)Improves thermal stability
Purity99.9% – 99.99% (total)Impacts device reliability
FormDisc / Plate (bonded or unbonded)Magnetron compatibility
Diameter25 – 300 mm (custom)Fits standard sputtering tools
Thickness3 – 6 mm (typical)Influences target lifetime
Backing PlateCopper (optional)Improves heat dissipation

Comparison with Related Phase-Change Targets

MaterialKey AdvantageTypical Application
C-GST TargetImproved endurance & data retentionAdvanced PCM & neuromorphic devices
Standard GSTFast switchingConventional PCM
N-Doped GSTReduced resistance driftMemory optimization research

FAQ

QuestionAnswer
What is the benefit of carbon doping in GST?Carbon improves thermal stability, endurance, and resistance drift behavior.
Can GST and carbon content be customized?Yes, both GST stoichiometry and carbon level can be tailored.
Are bonded targets recommended?Yes, copper-backed targets are preferred for high-power sputtering.
Is DC sputtering suitable for C-GST?Yes, DC magnetron sputtering is commonly used for C-GST films.
Is a Certificate of Analysis available?Yes, CoA can be provided upon request.

Packaging

Our C-GST Sputtering Targets are cleaned for vacuum service, individually labeled, and vacuum-sealed or inert-gas packed to prevent oxidation and contamination. Shock-absorbing materials and export-grade cartons or wooden crates ensure safe transportation and storage.

Conclusion

Germanium Antimony Tellurium Doped Carbon (C-GST) Sputtering Targets deliver superior compositional control, stable sputtering behavior, and enhanced phase-change performance for advanced memory and photonic applications. With flexible customization options and rigorous quality control, C-GST targets are an ideal choice for cutting-edge phase-change material research and semiconductor device development.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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