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ST0881 Germanium Antimony Tellurium Doped Carbon C-GST Target

Catalog Number: ST0881
Chemical Formula: Ge/Sb/Te/C
Purity: 99.99%+
Shape: Planar

Aluminum  ficatio sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Germanium Antimony Tellurium Doped Carbon C-GST Target Description

The Germanium Antimony Tellurium Doped Carbon (C-GST) Target is an alloy sputtering material with the formula Ge/Sb/Te/C. This target is crucial for phase change memory devices due to its ability to rapidly and reversibly switch between crystalline and amorphous states. Compared to other phase change materials, C-GST offers superior thermal stability, high crystallization rates, and extended durability. The addition of carbon enhances the material’s thermoelectric performance and lowers the RESET voltage.

Related Product: Germanium Telluride (GeTe) Sputtering Target, Bismuth Antimony Telluride (Bi/Sb/Te) Sputtering Target

Germanium Antimony Tellurium Doped Carbon C-GST Target Specifications

MaterialGermanium Antimony Tellurium Doped Carbon
SymbolGe/Sb/Te/C
Color/AppearanceGrey
Melting Point/
Density (g/cm3)5.7
Available sizesΦ440mm

Other dimensions available

Germanium Antimony Tellurium Doped Carbon C-GST Target Applications

The Germanium Antimony Tellurium Doped Carbon (C-GST) Target is used primarily for phase change memory materials.

Germanium Antimony Tellurium Doped Carbon C-GST Target Packing

Our Germanium Antimony Tellurium Doped Carbon (C-GST) Target is clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care to prevent any damage during storage or transportation.

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TFM offers Aluminum  fication and Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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