Germanium Antimony Tellurium Doped Carbon C-GST Target Description
The Germanium Antimony Tellurium Doped Carbon (C-GST) Target is an alloy sputtering material with the formula Ge/Sb/Te/C. This target is crucial for phase change memory devices due to its ability to rapidly and reversibly switch between crystalline and amorphous states. Compared to other phase change materials, C-GST offers superior thermal stability, high crystallization rates, and extended durability. The addition of carbon enhances the material’s thermoelectric performance and lowers the RESET voltage.
Related Product: Germanium Telluride (GeTe) Sputtering Target, Bismuth Antimony Telluride (Bi/Sb/Te) Sputtering Target
Germanium Antimony Tellurium Doped Carbon C-GST Target Specifications
Material | Germanium Antimony Tellurium Doped Carbon |
Symbol | Ge/Sb/Te/C |
Color/Appearance | Grey |
Melting Point | / |
Density (g/cm3) | 5.7 |
Available sizes | Φ440mm Other dimensions available |
Germanium Antimony Tellurium Doped Carbon C-GST Target Applications
The Germanium Antimony Tellurium Doped Carbon (C-GST) Target is used primarily for phase change memory materials.
Germanium Antimony Tellurium Doped Carbon C-GST Target Packing
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