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Germanium Silicon Sputtering Target, Ge₈₅Si₁₅

Germanium Silicon Sputtering Target

Introduction

The Germanium Silicon (Ge₈₅Si₁₅) Sputtering Target is a key material for thin film deposition in the semiconductor and optoelectronic industries. By combining the superior carrier mobility of germanium with the thermal stability and oxidation resistance of silicon, Ge-Si alloy targets enable precise control over bandgap and strain engineering in advanced device fabrication. This material is particularly valuable for producing thin films in high-performance electronics, photonics, and infrared sensing applications.

Detailed Description

The Ge₈₅Si₁₅ sputtering target consists of 85 at.% germanium and 15 at.% silicon, resulting in a material that offers a balanced combination of electronic conductivity and structural integrity. This specific ratio is commonly used to produce epitaxial or amorphous thin films with tunable electrical and optical characteristics.

The target is typically fabricated using vacuum melting, hot pressing, or zone refining to ensure high purity and uniform microstructure. These processes minimize impurities and grain boundary defects that can otherwise affect film quality and deposition consistency. The resulting target exhibits excellent density, uniform sputtering behavior, and strong adhesion to backing plates when bonded with indium or elastomer interfaces.

Applications

The Germanium Silicon Sputtering Target is used across several high-tech sectors:

  • Semiconductor fabrication: for strained-layer SiGe epitaxial films and heterojunction devices.

  • Optoelectronics: in infrared detectors, LEDs, and photonic integrated circuits.

  • Thin film transistors (TFTs): for next-generation display and sensor technologies.

  • Solar cells: to improve carrier mobility and light absorption efficiency.

  • MEMS and sensors: where precision-engineered thin films enhance signal performance.

Technical Parameters

ParameterTypical Value / RangeImportance
CompositionGe₈₅Si₁₅ (at.%)Defines alloy properties and bandgap
Purity99.9% – 99.999%Higher purity ensures superior film quality
Density5.2 – 5.4 g/cm³Affects sputtering rate and film uniformity
Diameter25 – 300 mm (customizable)Compatible with various sputtering systems
Thickness3 – 6 mmInfluences deposition efficiency
BondingIndium / ElastomerEnhances thermal stability and adhesion
FormDisc / Rectangle / CustomAdaptable for magnetron sputtering systems

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Ge₈₅Si₁₅Tunable electrical and optical propertiesSemiconductor and IR devices
Pure GeHigh carrier mobilityDetectors and IR optics
Pure SiExcellent thermal and oxidation resistanceCMOS and microelectronics

FAQ

QuestionAnswer
Can the composition be customized?Yes, Ge-Si ratios from Ge₉₅Si₅ to Ge₇₀Si₃₀ are available upon request.
How is the target bonded?Typically with indium or elastomer to ensure efficient heat dissipation and mechanical stability.
What is the packing method?Each target is vacuum-sealed, cushioned with anti-static foam, and packed in export-safe wooden crates.
What sputtering systems are compatible?Compatible with RF and DC magnetron sputtering systems.
What industries commonly use it?Semiconductor, infrared optics, solar energy, and R&D applications.

Packaging

Our Germanium Silicon Sputtering Targets are carefully vacuum-sealed and labeled to ensure full traceability and protection from contamination. External cartons or wooden crates provide impact resistance during transit, guaranteeing that each target arrives in pristine condition.

Conclusion

The Ge₈₅Si₁₅ Sputtering Target combines germanium’s superior electronic mobility with silicon’s stability, offering a versatile solution for high-precision thin film applications. With customizable compositions, bonding, and sizes, it supports the evolving needs of advanced semiconductor and photonic manufacturing.

For detailed specifications and a quotation, please contact us at [sales@thinfilmmaterials.com].

Order Now

Ge–Si target Ge85Si15 at% 2"×0.125"

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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