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ST0293 Hafnium Boride Sputtering Target, HfB2

Chemical Formula: HfB2
Catalog Number: ST0293
CAS Number: 12007-23-7
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Hafnium Boride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Hafnium Boride Sputtering Target Description

A Hafnium Boride Sputtering Target is a ceramic material made from hafnium and boron, used in sputtering processes. This type of target is commonly employed in applications requiring thin film deposition due to its unique properties and composition.

HafniumHafnium is a chemical element with the symbol “Hf” and an atomic number of 72. The name “hafnium” originates from the Latin name “Hania,” referring to Copenhagen, Denmark, where it was discovered. It was first identified in 1911 by Georges Urbain and Vladimir Vernadsky, with its isolation and confirmation later achieved by Dirk Coster and George de Hevesy. Hafnium is located in Period 6 and Group 4 of the periodic table, classified within the d-block elements. Its relative atomic mass is approximately 178.49 Daltons, with the value in parentheses indicating a margin of uncertainty.

Related Product: Hafnium Sputtering Target

BoronBoron, symbolized as “B,” has an atomic number of 5 and is a chemical element named after the Arabic word ‘buraq,’ which referred to borax. It was first identified in 1808 by Louis-Joseph Gay-Lussac and Louis-Jacques Thénard, with the successful isolation later announced by Sir Humphry Davy. Boron is located in Period 2 and Group 13 of the periodic table, belonging to the p-block elements. Its relative atomic mass is approximately 10.811 Daltons, with the number in parentheses indicating a margin of uncertainty.

Hafnium Boride Sputtering Target Specification

Compound FormulaHfB2
AppearanceBrown to black target
Density10.5 g/cm3
Melting Point3,250° C
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Hafnium Boride Sputtering Target Application

The Hafnium Boride Sputtering Target is utilized in a range of applications, including thin film deposition and decorative coatings. It is commonly used in the semiconductor industry, display technologies, and the manufacturing of LEDs and photovoltaic devices. Additionally, this material is important for functional coatings, optical information storage, glass coating applications such as automotive and architectural glass, and optical communication technologies.

Hafnium Boride Sputtering Target Packing

Our Hafnium Boride Sputtering Targets are meticulously tagged and labeled on the outside to facilitate easy identification and uphold strict quality control standards. We take comprehensive measures to prevent any damage during storage and transportation, ensuring that the targets remain in excellent condition.

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TFM offers Hafnium Boride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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