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Indium Arsenide Sputtering Target

ST0947 Indium Arsenide Sputtering Target, InAs

Chemical FormulaInAs
Catalog No.ST0947
CAS Number1303-11-3
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Indium Arsenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Indium Arsenide Sputtering Target Description

Indium Arsenide Sputtering Targets, made from high-purity Indium Arsenide (InAs), are extensively used in both Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes. These targets leverage the unique properties of Indium Arsenide, making them essential for semiconductor, microwave, and electronic applications.

Key Properties and Applications:

  • Semiconductor Properties: Indium Arsenide (InAs) offers electrical conductivity between that of a conductor and an insulator, making it a versatile semiconductor material. It is widely used in electronics and photonics, particularly for semiconductor nanostructures.
  • Direct Energy Gap: The direct energy gap of InAs allows for efficient electron and hole transitions with minimal energy, making it ideal for optoelectronic devices such as lasers and photodetectors.
  • High Electron Mobility: InAs’s high electron mobility is beneficial for high-frequency and microwave devices, enhancing performance in communication systems and radar applications.
  • Thermal Stability: Indium Arsenide maintains stability across a range of temperatures, ensuring reliable performance in various environments.
  • Topological Insulator Properties: Under certain conditions, InAs can exhibit topological insulator characteristics, contributing to advancements in topological quantum computing research.

These features make Indium Arsenide Sputtering Targets valuable in developing advanced semiconductor devices, high-speed electronic components, and cutting-edge research in optoelectronics and quantum computing.

Related Product: Indium Iron Oxide Sputtering Target, Indium Sputtering Target

Indium Arsenide Sputtering Target Specifications

Compound FormulaInAs
Molecular Weight189.74
AppearanceGrey Target
Melting Point942 °C
Density5.67 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Indium Arsenide Sputtering Target Handling Notes

Indium bonding is recommended for Indium Arsenide Sputtering Targets because of the material’s inherent properties that are not well-suited for standard sputtering techniques. Indium Arsenide (InAs) exhibits characteristics such as brittleness and low thermal conductivity, which can pose challenges during the sputtering process. Specifically:

  • Brittleness: The material’s brittleness can lead to breakage or cracking during handling and sputtering.
  • Low Thermal Conductivity: InAs has low thermal conductivity, making it prone to thermal shock during the sputtering process. This can affect the uniformity and quality of the deposited thin films.

To mitigate these issues and ensure effective sputtering, indium bonding provides a solution by enhancing the material’s adherence to the sputtering apparatus and improving its thermal management during the deposition process.

Indium Arsenide Sputtering Target Application

  1. Laser and Detector Preparation: Indium Arsenide Sputtering Targets are utilized in the sputter deposition process to create thin films for lasers and photodetectors, leveraging InAs’s direct energy gap and high electron mobility for enhanced device performance.
  2. Semiconductor Device Preparation: In the semiconductor industry, these targets are employed to deposit thin films for integrated circuits and various electronic devices, utilizing InAs’s semiconductor properties for improved functionality.
  3. Microwave and RF Devices: Due to its high electron mobility, Indium Arsenide Sputtering Targets are crucial in fabricating high-frequency and microwave devices, including field-effect transistors and other RF components.
  4. Topological Insulator Research: Indium Arsenide is studied for its potential as a topological insulator, making these sputtering targets valuable for research in topological physics and quantum computing.
  5. Energy Storage Applications: Research is underway to explore Indium Arsenide’s potential in metal halide sodium-ion batteries, aiming to improve energy storage technologies.
  6. Semiconductor Nanostructure Preparation: Indium Arsenide Sputtering Targets are used to prepare semiconductor nanostructures, such as nanowires and nanodots, which are essential for developing innovative nanoelectronic devices.

Indium Arsenide Sputtering Target Packaging

Our Indium Arsenide Sputtering Target is meticulously handled during storage and transportation to ensure that it maintains the highest quality and integrity throughout its journey.

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TFM offers Indium Arsenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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