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Indium Iron Oxide Sputtering Target

ST0152 Indium Iron Oxide Sputtering Target, InFe2O4

Chemical Formula: InFe2O4
Catalog Number: ST0152
CAS Number: 58942-99-7
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Indium Iron Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

The Indium Iron Oxide Sputtering Target (InFe₂O₄) is a functional oxide target belonging to the spinel-type oxide family, attracting growing interest in advanced thin-film research and emerging electronic applications. By combining the electrical characteristics of indium-based oxides with the magnetic and catalytic properties of iron oxides, InFe₂O₄ enables the deposition of multifunctional oxide films with tunable electrical, optical, and magnetic behavior.

This material is particularly valuable for research laboratories and advanced manufacturing environments exploring next-generation transparent electronics, spintronic devices, and functional oxide coatings.

Detailed Description

Indium Iron Oxide (InFe₂O₄) sputtering targets are typically fabricated using high-purity indium oxide and iron oxide precursor powders, processed through controlled solid-state reaction, calcination, and high-density sintering. The resulting ceramic target exhibits a dense microstructure, stable stoichiometry, and uniform elemental distribution—critical factors for consistent sputtering performance.

The spinel structure of InFe₂O₄ plays a key role in determining thin-film properties. During magnetron sputtering, this structure supports stable plasma interaction and predictable sputtering rates, enabling good film thickness control and compositional uniformity. Compared with simple binary oxides, InFe₂O₄ allows engineers to fine-tune film conductivity, carrier concentration, and magnetic response by adjusting deposition parameters such as oxygen partial pressure, substrate temperature, and post-deposition annealing.

Targets are available in a wide range of diameters and thicknesses, and can be supplied with or without metallic backing plates depending on power density and thermal management requirements.

Applications

Indium Iron Oxide sputtering targets are mainly used in advanced R&D and pilot-scale production, including:

  • Functional oxide thin films for electronic and optoelectronic devices

  • Spintronic and magneto-electronic research

  • Transparent or semi-transparent conductive oxide studies

  • Sensor materials (gas, magnetic, or multifunctional sensors)

  • Catalytic and electrochemical thin-film coatings

  • Academic and industrial materials science research

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaInFe₂O₄Determines spinel oxide properties
Purity99.9% – 99.99%Higher purity improves film uniformity
Target Diameter25 – 300 mm (custom)Fits different sputtering systems
Thickness3 – 6 mm (custom available)Influences sputtering stability
Density≥ 95% of theoreticalEnsures consistent sputter rate
Backing PlateOptional (Cu / Ti)Improves heat dissipation
Process CompatibilityDC / RF Magnetron SputteringFlexible system integration

Comparison with Related Oxide Targets

MaterialKey AdvantageTypical Application
Indium Iron Oxide (InFe₂O₄)Combined electrical & magnetic functionalitySpintronics, multifunctional films
Indium Tin Oxide (ITO)High transparency and conductivityDisplays, touch panels
Iron Oxide (Fe₂O₃ / Fe₃O₄)Strong magnetic propertiesMagnetic coatings, sensors
Indium Oxide (In₂O₃)Stable n-type conductivityTransparent electronics

FAQ

QuestionAnswer
Can the composition be customized?Yes, stoichiometry adjustments can be discussed for research purposes.
Is RF sputtering required?RF sputtering is commonly used due to ceramic nature, though DC may be possible with suitable systems.
Can small R&D quantities be supplied?Yes, small-diameter targets for laboratory use are available.
How is the target packaged?Vacuum-sealed with protective cushioning for safe transport.
Is this material suitable for mass production?It is mainly used in R&D and pilot-scale production, depending on application maturity.

Packaging

Our Indium Iron Oxide Sputtering Targets are meticulously tagged and labeled externally to ensure accurate identification and strict quality control. Each target is vacuum-sealed and protected with anti-static and shock-absorbing materials to prevent contamination or mechanical damage during storage and transportation. Export-grade cartons or wooden crates are used when required.

Conclusion

The Indium Iron Oxide Sputtering Target (InFe₂O₄) offers a unique material platform for depositing advanced functional oxide films that combine electrical, magnetic, and catalytic properties. With stable sputtering behavior, customizable dimensions, and reliable material quality, it is an excellent choice for researchers and engineers working on next-generation oxide thin-film technologies.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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