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Indium Oxide (In2O3) Sputtering Target

ST0153 Indium Oxide (In2O3) Sputtering Target

Chemical Formula: In2O3
Catalog Number: ST0153
CAS Number: 1312-43-2
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

 Indium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

CoA_In₂O₃

 

Indium Oxide (In₂O₃) Sputtering Target

Introduction

The Indium Oxide (In₂O₃) Sputtering Target from Thin Film Materials (TFM) is a high-purity ceramic target used in thin film deposition for semiconductors, optoelectronics, transparent conducting coatings, and energy devices. In₂O₃ is a wide bandgap semiconductor with excellent optical transparency and electrical conductivity, making it a vital material in advanced thin film research and production.

Detailed Description

TFM’s indium oxide sputtering targets are engineered with high density, uniform grain structure, and purities typically ranging from 99.9% (3N) to 99.99% (4N). This ensures consistent sputtering rates and high-quality films with low contamination.

  • Chemical Formula: In₂O₃

  • Appearance: Yellowish to pale brown ceramic

  • Density: ~7.18 g/cm³

  • Melting Point: ~1,910 °C

  • Crystal Structure: Cubic (bixbyite type)

We supply In₂O₃ sputtering targets in disc, rectangular, and custom forms. For improved thermal management and durability, bonding services with indium or elastomer onto copper or titanium backing plates are available.

Applications

Indium oxide sputtering targets are widely used in:

  • Transparent conducting oxides (TCOs) for displays, touchscreens, and photovoltaics

  • Optoelectronic devices such as LEDs, photodetectors, and sensors

  • Energy-efficient coatings on architectural and automotive glass

  • Semiconductors: buffer layers and thin film transistors (TFTs)

  • Research: development of functional oxide films and nanostructures

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Ensures minimal contamination for high-performance films
Diameter25 – 150 mm (custom up to 300 mm)Fits common sputtering systems
Thickness3 – 6 mmControls sputtering rate and film thickness
Bonding OptionsIndium / ElastomerImproves adhesion and thermal stability
Backing PlateCopper / TitaniumProvides mechanical support and efficient heat transfer

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Indium Oxide (In₂O₃)Transparency + conductivityDisplays, sensors, solar cells
ITO (In₂O₃–SnO₂)Higher conductivity & film uniformityTouchscreens, photovoltaics
ZnOLow cost, n-type semiconductorDisplays, transparent coatings

FAQ

QuestionAnswer
Can In₂O₃ sputtering targets be customized?Yes, TFM provides custom diameters, thicknesses, and bonded targets.
Do you offer bonding services?Yes, with indium or elastomer to Cu/Ti backing plates.
How are the targets packaged?Each target is vacuum-sealed, cushioned with foam, and shipped in export-safe cartons or crates.
Which industries use In₂O₃ targets?Semiconductors, displays, energy-efficient glass, and optoelectronics.

Packaging

All Indium Oxide sputtering targets are vacuum-sealed, moisture-protected, and securely packaged with protective foam. Export-approved cartons or wooden crates ensure safe delivery worldwide.

Conclusion

The Indium Oxide (In₂O₃) Sputtering Target from TFM provides high purity, excellent transparency, and stable deposition properties, making it a reliable choice for advanced thin film applications. With customizable specifications and professional bonding services, our In₂O₃ targets support both research innovation and industrial-scale production.

For detailed specifications, quotations, and tailored solutions, please contact us at sales@thinfilmmaterials.com.

Order Now

In₂O₃ Target 4N ø76.2*3.18mm Indium Bonded 3mm Cu B/Plate, In₂O₃ Target 4N ø50.8*3mm Indium Bonded 3mm Cu B/Plate, In2O3 target 4N ø50.8×3 mm with 2 mm Cu B/Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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