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ST0279 Indium Sulfide Sputtering Target, In2S3

Chemical Formula: In2S3
Catalog Number: ST0279
CAS Number: 12030-24-9
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Indium Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Indium Sulfide Sputtering Target Description

The indium sulfide sputtering target is a type of ceramic sputtering material made from indium and sulfur. This material is commonly used in various industrial applications, particularly for creating thin films. It offers a unique combination of properties that make it suitable for use in advanced electronic and optoelectronic devices, including displays, LEDs, and photovoltaic cells. Indium sulfide is valued for its ability to form high-quality films with good electrical and optical characteristics.

IndiumIndium is a chemical element that derives its name from the Latin word ‘indicium,’ meaning violet or indigo, reflecting the color of its spectral lines. It was first identified in 1863 by F. Reich and T. Richter, who also successfully isolated the element. Indium is represented by the chemical symbol “In” and has an atomic number of 49. It is positioned in Group 13 and Period 5 of the periodic table, belonging to the p-block elements. The relative atomic mass of indium is 114.818(3) Dalton, with the number in brackets indicating the uncertainty in the measurement.

Related Product: Indium Sputtering Target

SulfurSulfur, also known as sulphur, is a chemical element with a rich history, dating back to before 2000 BC, where it was used and discovered by ancient Chinese and Indian civilizations. The name sulfur derives from either the Sanskrit word ‘sulvere’ or the Latin ‘sulfurium,’ both referring to sulfur. Its chemical symbol is “S,” and it is positioned in Group 16 and Period 3 of the periodic table, part of the p-block. Sulfur has an atomic number of 16 and a relative atomic mass of 32.065(5) Dalton, with the value in brackets indicating the uncertainty of the measurement.

Indium Sulfide Sputtering Target Specification

Compound FormulaIn2S3
AppearanceSolid
Melting Point1,050° C
Density4.90 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Indium Sulfide Sputtering Target Application

The indium sulfide sputtering target is widely utilized in various applications, including thin film deposition and decorative coatings. It’s especially valuable in the semiconductor, display, LED, and photovoltaic industries, where it serves as a functional coating material. Additionally, it finds use in optical information storage, glass coating for automotive and architectural purposes, and optical communication systems. These applications leverage the unique properties of indium sulfide to enhance the performance and durability of coated surfaces.

Indium Sulfide Sputtering Target Packing

Our indium sulfide sputter targets are meticulously tagged and labeled externally to ensure efficient identification and stringent quality control. We take great care in packaging to prevent any potential damage during storage or transportation, thereby preserving the integrity and quality of the product.

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TFM offers Indium Sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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