Iron Germanium Telluride (Fe₅GeTe₂) Sputtering Target
Overview
Iron Germanium Telluride (Fe₅GeTe₂) is a layered transition metal chalcogenide with remarkable magnetic and electronic properties. As a member of the van der Waals (vdW) magnetic material family, Fe₅GeTe₂ has attracted significant attention in spintronics and 2D magnetism research. Its high Curie temperature, tunable magnetic anisotropy, and stability in thin-film form make it an ideal material for advanced magnetic and optoelectronic devices.
Key Properties
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Chemical Formula: Fe₅GeTe₂
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Purity: ≥ 99.9% (3N)
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Crystal Structure: Hexagonal layered (vdW structure)
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Magnetic Properties: High Curie temperature (> 270 K), ferromagnetic ordering
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Electronic Properties: Metallic conductivity with tunable magnetic anisotropy
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Film Quality: Supports epitaxial growth for atomically thin layers
Typical Applications
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Spintronic devices (spin valves, magnetic tunnel junctions)
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2D magnetism research for next-generation data storage
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Magneto-optical devices
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Fundamental condensed matter physics studies
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Layered heterostructures with other 2D materials
Example Specification
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Material: Iron Germanium Telluride (Fe₅GeTe₂)
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Purity: 99.9% (3N)
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Size: Diameter 1″ × Thickness 3 mm
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Bonding: Available unbonded or bonded to copper backing plate
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Deposition Method: RF or DC Magnetron Sputtering
Handling and Storage
Store in an inert atmosphere (argon or vacuum-sealed) to minimize oxidation. Avoid prolonged exposure to air and moisture. Handle with gloves in a clean environment to ensure film purity during deposition.
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