Introduction
Lanthanum Gallate (LaGaO₃) Sputtering Target is a perovskite-type oxide material valued for its excellent ionic conductivity, thermal stability, and compatibility with complex oxide heterostructures. It is widely used in advanced thin film research, particularly in solid oxide fuel cells (SOFCs), oxide electronics, and functional oxide interfaces. As a sputtering target, LaGaO₃ enables controlled deposition of high-quality gallate-based thin films with well-defined composition and crystalline properties.
Detailed Description
Our Lanthanum Gallate Sputtering Targets are manufactured from high-purity LaGaO₃ ceramic powders synthesized with precise stoichiometric control. Maintaining the correct La:Ga ratio is critical, as deviations can directly affect ionic transport behavior, dielectric properties, and film crystallinity.
The targets are fabricated through optimized calcination and high-temperature sintering processes to achieve high density and uniform microstructure. A dense ceramic body reduces particle generation and improves plasma stability during RF sputtering, leading to smooth, compositionally uniform thin films. Targets are available in standard round or rectangular formats and can be supplied unbonded or bonded to metallic backing plates to enhance heat dissipation and mechanical stability in higher-power sputtering systems.
Applications
Lanthanum Gallate Sputtering Targets are commonly used in the following thin film applications:
Electrolyte and functional layers for solid oxide fuel cells (SOFCs)
Oxide ion–conducting thin films
Substrates and buffer layers for complex oxide heterostructures
Dielectric and insulating layers in oxide electronics
Functional coatings for sensors and energy devices
Academic and industrial R&D on perovskite oxides
Technical Parameters
| Parameter | Typical Value / Range | Importance |
|---|---|---|
| Chemical Composition | LaGaO₃ | Determines ionic and dielectric properties |
| Purity | 99.9% – 99.99% | Minimizes impurity-related defects |
| Diameter | 25 – 200 mm (custom available) | Compatible with standard sputtering cathodes |
| Thickness | 3 – 6 mm | Influences target lifetime |
| Density | ≥ 95% theoretical | Improves plasma stability |
| Sputtering Mode | RF sputtering | Required for ceramic oxides |
| Bonding | Unbonded / Cu or Ti backing (optional) | Enhances thermal management |
Comparison with Related Materials
| Material | Key Advantage | Typical Application |
|---|---|---|
| LaGaO₃ | High oxide-ion conductivity, thermal stability | SOFC & oxide electronics |
| Yttria-Stabilized Zirconia (YSZ) | Mature electrolyte material | SOFC electrolytes |
| Lanthanum Aluminate (LaAlO₃) | Good lattice matching | Oxide heterostructures |
| Strontium-Doped LaGaO₃ (LSGM) | Enhanced ionic conductivity | Advanced SOFCs |
FAQ
| Question | Answer |
|---|---|
| Can the target composition be customized? | Yes, doped LaGaO₃ compositions are available upon request. |
| Is RF sputtering required for LaGaO₃? | Yes, LaGaO₃ is a ceramic oxide and typically requires RF sputtering. |
| Are bonded targets available? | Yes, bonding to copper or titanium backing plates can be provided. |
| How is the target packaged? | Vacuum-sealed with protective foam and export-grade cartons or crates. |
Packaging
Our Lanthanum Gallate Sputtering Targets are meticulously tagged and vacuum-sealed to ensure traceability and protection from moisture and contamination. Robust export-grade packaging is used to prevent damage during storage and transportation.
Conclusion
Lanthanum Gallate (LaGaO₃) Sputtering Target provides a reliable solution for depositing high-quality perovskite oxide thin films with excellent ionic and dielectric performance. With precise composition control, high density, and flexible customization options, it is well suited for advanced energy devices, oxide electronics, and research applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.




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