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Lanthanum Nickel Oxide Evaporation Materials

VD0700 Lanthanum Nickel Oxide Evaporation Materials, LaNiO3

Catalog No.VD0700
MaterialLanthanum Nickel Oxide (LaNiO3)
Purity99.9%
ShapePowder/ Granule/ Custom-made

TFM stands out as a premier producer and distributor of high-purity lanthanum nickel oxide evaporation materials, along with a broad range of other evaporation materials. Our offerings come in both powder and granule forms, and we also provide customized options to meet specific needs upon request.

 

MSDS File

Introduction

Lanthanum Nickel Oxide (LaNiO₃) evaporation materials are complex oxide sources used in advanced thin film deposition for oxide electronics, ferroelectric heterostructures, and functional perovskite-based devices. As a conductive perovskite oxide, LaNiO₃ is widely employed as a bottom electrode layer or buffer layer in oxide thin film stacks due to its metallic conductivity and structural compatibility with many ABO₃-type materials.

LaNiO₃ evaporation materials are particularly valuable in research environments focused on epitaxial oxide growth and next-generation electronic devices.

Detailed Description

LaNiO₃ belongs to the perovskite oxide family and exhibits metallic conductivity at room temperature, distinguishing it from many other oxide materials. Its pseudo-cubic lattice structure makes it highly compatible with substrates such as SrTiO₃, LaAlO₃, and other perovskite crystals, supporting high-quality epitaxial film growth.

High-purity LaNiO₃ evaporation materials are typically prepared via solid-state synthesis followed by controlled sintering and crushing into suitable forms such as pellets, granules, or compact pieces. Strict process control ensures:

  • Accurate La:Ni stoichiometry (1:1 atomic ratio)

  • Controlled oxygen content

  • High phase purity

  • Uniform microstructure

These parameters are critical for maintaining the electrical conductivity and structural integrity of deposited films. Because LaNiO₃ is a complex oxide, evaporation is typically performed under carefully controlled vacuum and oxygen partial pressure conditions to preserve film stoichiometry.

LaNiO₃ evaporation materials are compatible with electron beam evaporation and, in some cases, high-temperature thermal evaporation systems.

Applications

Lanthanum Nickel Oxide evaporation materials are widely used in:

  • Oxide Electronics
    Conductive electrode layers in perovskite thin film devices.

  • Ferroelectric & Multiferroic Heterostructures
    Bottom electrodes for materials such as PZT and related compounds.

  • Epitaxial Thin Film Growth
    Compatible with perovskite substrates for high-quality crystal alignment.

  • Spintronic & Correlated Electron Systems
    Research on strongly correlated oxide materials.

  • Photonic & Functional Oxide Devices
    Integrated oxide-based electronic components.

  • University & National Laboratory R&D
    Advanced thin film material studies.

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaLaNiO₃Defines perovskite structure
Purity99.9% – 99.99% (3N–4N)Minimizes secondary phases
FormPellet / Granule / Custom piecesCompatible with evaporation sources
Particle Size1 – 5 mm typical (custom)Influences evaporation behavior
Deposition MethodE-beam preferredSuitable for complex oxides
StoichiometryLa:Ni = 1:1Ensures film conductivity

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Lanthanum Nickel Oxide (LaNiO₃)Metallic conductivity in perovskite structureOxide electrodes
Strontium Ruthenate (SrRuO₃)Conductive oxide electrodeFerroelectric devices
Nickel Oxide (NiO)Insulating oxideResistive switching
Lanthanum Strontium Manganite (LSMO)Ferromagnetic perovskite oxideSpintronics

LaNiO₃ is typically selected when conductive oxide behavior and lattice compatibility are both required.

FAQ

QuestionAnswer
Can the material be customized in pellet size?Yes, pellet and granule sizes can be tailored to your evaporation system.
Is oxygen control important during deposition?Yes, maintaining appropriate oxygen partial pressure helps preserve film stoichiometry.
What purity level is recommended?4N purity is generally preferred for high-quality epitaxial films.
Which deposition method is suitable?Electron beam evaporation is commonly used for complex oxide materials.
How is the product packaged?Vacuum-sealed with moisture protection and export-safe packaging.

Packaging

Our Lanthanum Nickel Oxide Evaporation Materials are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the materials arrive in perfect condition.

Conclusion

Lanthanum Nickel Oxide (LaNiO₃) evaporation materials provide a reliable source for depositing conductive perovskite oxide thin films used in advanced electronic and functional oxide devices. With precise stoichiometry control, high purity, and customizable forms, LaNiO₃ supports stable deposition and consistent film performance.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

  • They are high‐purity substances (e.g. metals, alloys, or compounds) used in thermal or electron‐beam evaporation processes to form thin films on substrates.

  • Typically, they’re processed into a form (often ingots, pellets, or wires) that can be efficiently vaporized. Preparation emphasizes high purity and controlled composition to ensure film quality.

  • Thermal evaporation and electron-beam (e-beam) evaporation are the two main techniques, where material is heated (or bombarded with electrons) until it vaporizes and then condenses on the substrate.

  • Thermal evaporation heats the material directly (often using a resistive heater), while e-beam evaporation uses a focused electron beam to locally heat and vaporize the source material—each method offering different control and energy efficiency.

  • Key parameters include source temperature, vacuum level, deposition rate, substrate temperature, and the distance between the source and the substrate. These factors influence film uniformity, adhesion, and microstructure.

  • Evaporation generally produces high-purity films with excellent control over thickness, and it is especially suitable for materials with relatively low melting points or high vapor pressures.

  • Challenges include issues with step coverage (due to line-of-sight deposition), shadowing effects on complex topographies, and possible re-evaporation of material from the substrate if temperature isn’t properly controlled.

  • Common evaporation materials include noble metals (e.g., gold, silver), semiconductors (e.g., silicon, germanium), metal oxides, and organic compounds—each chosen for its specific optical, electrical, or mechanical properties.

  • Selection depends on desired film properties (conductivity, optical transparency, adhesion), compatibility with the evaporation process, and the final device application (semiconductor, optical coating, etc.).

  • Optimizing substrate temperature, deposition rate, and chamber vacuum are critical for ensuring that the film adheres well and forms the intended microstructure without defects.

  • Troubleshooting may involve checking the source material’s purity, ensuring stable source temperature, verifying the vacuum level, adjusting the substrate’s position or temperature, and monitoring deposition rate fluctuations.

While evaporation tends to yield very high purity films with excellent thickness control, it is limited by its line-of-sight nature. In contrast, sputtering can deposit films more uniformly on complex surfaces and is more versatile for a broader range of materials.

 

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