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Lanthanum Niobium Oxide Sputtering Target

ST0162 Lanthanum Niobium Oxide Sputtering Target, LaNbO3

Chemical Formula: LaNbO3
Catalog Number: ST0162
CAS Number: 12315-89-8
Purity: >99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Lanthanum Niobium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Lanthanum Niobium Oxide Sputter Target Description

The Lanthanum Niobium Oxide Sputtering Target from TFM is an oxide sputtering material composed of lanthanum (La), niobium (Nb), and oxygen (O).

LanthanumLanthanum is a soft, malleable, silvery-white metal and one of the most reactive rare earth elements. It is used in the production of special optical glasses and to improve the malleability of steel. Additionally, lanthanum is valuable in wastewater treatment and oil refining processes. Scientists have nicknamed lanthanum “super calcium” due to its application in photoconversion films, which enhance the efficiency of solar cells by converting ultraviolet light into visible light.

Related Product: Lanthanum Sputtering Target

niobiumNiobium is a silver-colored metal that is generally found in conjunction with tantalum, the two elements being separated by fractional crystallization of their respective fluoro-complexes. It has an abundance of 20 ppm in the earth’s crust. As a pure metal, it is very reactive and forms an extremely stable oxide when exposed to air which enhances its corrosion resistance. Niobium will react with a variety of non-metals at elevated temperatures.

Related Product: Niobium Sputtering Target

OxygenOxygen is a chemical element that originated from the Greek ‘oxy’ and ‘genes’ meaning acid-forming. It was first mentioned in 1771 and observed by W. Scheele. The isolation was later accomplished and announced by W. Scheele. “O” is the canonical chemical symbol of oxygen. Its atomic number in the periodic table of elements is 8 with a location at Period 2 and Group 16, belonging to the p-block. The relative atomic mass of oxygen is 15.9994(3) Dalton, the number in the brackets indicating the uncertainty.

Lanthanum Niobium Oxide Sputter Target Handling Notes

  • Indium Bonding: Indium bonding is recommended for the lanthanum niobium oxide sputtering target due to its brittleness and low thermal conductivity, which make it less suitable for traditional sputtering methods.
  • Thermal Conductivity: This material has low thermal conductivity and is susceptible to thermal shock. Proper handling and bonding techniques are essential to prevent damage during the sputtering process.

Lanthanum Niobium Oxide Sputter Target Application

The Lanthanum Niobium Oxide Sputtering Target is utilized in a wide range of applications, including thin film deposition, decorative coatings, semiconductors, displays, LEDs, and photovoltaic devices. It is also important for functional coatings, the optical information storage industry, glass coatings for automotive and architectural purposes, and optical communication systems, among other fields.

Lanthanum Niobium Oxide Sputter Target Packing

Our Lanthanum Niobium Oxide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain strict quality control. We take great care to prevent any damage during storage and transportation, ensuring the highest standards of product integrity upon delivery.

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TFM offers Lanthanum Niobium Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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