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ST0974 Manganese-Iron Oxide Sputtering Target, MnFe2O4

Chemical FormulaMnFe2O4
Catalog No.ST0974
CAS Number12063-10-4
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Renowned for their superior purity and competitive pricing, Manganese-Iron Oxide sputtering targets from TFM exemplify excellence. Leveraging our deep expertise in materials science, we ensure outstanding performance and reliability through meticulous craftsmanship in their production.

MSDS File

Manganese-Iron Oxide Sputtering Target Description

Manganese-Iron Oxide sputtering targets are recognized for their exceptional purity, ensuring reliable and uncontaminated performance in thin film preparation processes. Notably, their superior electrical conductivity makes them ideal for the semiconductor industry. Comprising manganese and iron oxides, these targets provide excellent chemical stability, making them robust across various thin film deposition techniques. Additionally, their unique composition allows for tunable optical properties, making them a versatile option for optical coatings and the precise fabrication of optical devices.

Related Product: Manganese Sputtering Target, Manganese Oxide Sputtering Target

Manganese-Iron Oxide Sputtering Target Specifications

Compound FormulaMnFe2O4
Molecular Weight230.62
AppearanceBlack Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Manganese-Iron Oxide Sputtering Target Handling Notes

Indium bonding is advised for Manganese-Iron Oxide sputtering targets because of their inherent properties, such as brittleness and low thermal conductivity, which can present challenges during sputtering. Due to their low thermal conductivity and susceptibility to thermal shock, indium bonding helps ensure stable and effective performance.

Manganese-Iron Oxide Sputtering Target Application

Semiconductor Manufacturing: Manganese-Iron Oxide sputtering targets are highly valued in the semiconductor industry for their exceptional electrical properties and high purity. They are particularly effective in thin film deposition processes, where they help produce high-performance electronic components.

Optical Coatings: Composed of manganese and iron oxides, these targets are crucial for developing optical coatings. They offer tunable optical properties, making them suitable for a wide range of optical applications and enhancing the performance of optical devices.

Optical Device Preparation: The unique optical properties of Manganese-Iron Oxide sputtering targets make them ideal for preparing optical devices. They enable precise modulation of device performance and characteristics, contributing to advanced optical technologies.

Thin Film Deposition Processes: Thanks to their excellent chemical stability, Manganese-Iron Oxide targets perform reliably across various thin film deposition processes. They are used extensively in industrial applications, including coatings and thin film preparation, ensuring consistent and high-quality results.

Manganese-Iron Oxide Sputtering Target Packaging

Our Manganese-Iron Oxide sputtering targets are meticulously managed during storage and transportation to maintain their quality and ensure they arrive in optimal condition.

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TFM’s Manganese-Iron Oxide sputtering targets come in a range of forms, purities, and sizes. We focus on producing high-purity physical vapor deposition (PVD) materials with maximum density and minimal average grain sizes. These targets are suitable for use in semiconductor applications, as well as in chemical vapor deposition (CVD) and PVD for display and optical technologies.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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