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ST0283 Manganese Sulfide Sputtering Target, MnS

Chemical Formula: MnS
Catalog Number: ST0283
CAS Number: 18820-29-6
Purity: >99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Manganese Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Manganese Sulfide Sputtering Target Description

The Manganese Sulfide Sputtering Target is a type of sulfide ceramic sputtering material composed of manganese and sulfur. It is used in various thin film deposition processes for applications such as semiconductor devices, displays, LEDs, photovoltaic systems, and other functional coatings. This material is known for its specific properties that make it suitable for these high-tech applications, providing effective coatings in industries like optical communication, automotive glass, and architectural glass.

manganeseManganese is a chemical element that originated from either the Latin word ‘magnes,’ meaning magnet, or from the black magnesium oxide, ‘magnesia nigra.’ It was first mentioned in 1770 and observed by O. Bergman. The isolation of manganese was later accomplished and announced by G. Gahn. The canonical chemical symbol for manganese is “Mn.” It has an atomic number of 25, placing it in Period 4 and Group 7 of the periodic table, within the d-block. The relative atomic mass of manganese is 54.938045(5) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: Manganese Sputtering Target

SulfurSulfur, also called sulphur, is a chemical element that originated from either the Sanskrit ‘sulvere’ or the Latin ‘sulfurium,’ both names for sulfur. It has been used since before 2000 BC and was discovered by Chinese and Indian civilizations. The canonical chemical symbol for sulfur is “S.” It has an atomic number of 16, placing it in Period 3 and Group 16 of the periodic table, within the p-block. The relative atomic mass of sulfur is 32.065(5) Dalton, with the number in brackets indicating the measurement uncertainty.

Manganese Sulfide Sputtering Target Specification

Compound FormulaMnS
AppearanceSolid
Melting Point449.85 °C
Density3.3-3.99 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Manganese Sulfide Sputtering Target Application

The manganese sulfide sputtering target is utilized in thin film deposition for various applications, including decoration, semiconductors, displays, LED and photovoltaic devices, and functional coatings. Additionally, it is used in industries such as optical information storage, glass coating for car and architectural glass, and optical communication. This target material is valued for its properties in these specialized applications, providing essential functions in the manufacturing and enhancement of these products.

Manganese Sulfide Sputtering Target Packing

Your manganese sulfide sputtering targets are carefully tagged and labeled externally to ensure efficient identification and quality control. Special attention is given to prevent any damage during storage and transportation, ensuring that the targets arrive in optimal condition for use in thin film deposition and other applications.

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TFM offers Manganese Sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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