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Manganese Telluride Sputtering Target, MnTe Target

Chemical Formula: MnTe
Catalog Number: TFM-SPT-0399
CAS Number: 12032-88-1
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Manganese (II) Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

COA_MnTe_TargetPdf

 

Product Overview

Manganese Telluride Sputtering Target (MnTe Target) is a chalcogenide sputtering target intended for composition-sensitive thin-film deposition. For sulfur-, selenium-, or tellurium-containing materials, the target chemistry is only the starting point: sputtering yield differences, substrate temperature, gas pressure, and volatile-component loss can shift the deposited-film composition relative to the nominal target composition.



Material and Deposition Characteristics

These targets are commonly treated as mechanically brittle and composition-sensitive sputtering materials. RF sputtering is often considered when target conductivity is limited. Power density, substrate temperature, and working pressure should be controlled conservatively, and the deposited film composition should be verified when precise sulfur, selenium, or tellurium stoichiometry is required.

Technical Data

ParameterTypical Value / RangeImportance
Chemical FormulaMnTeDefines film stoichiometry
Purity99.9% – 99.99% (3N–4N)Minimizes impurity-related defects
Density≥95–99% theoretical densityEnsures stable sputtering behavior
Diameter1″ – 4″ (custom available)Suitable for R&D systems
Thickness3 – 8 mmAffects lifetime & deposition rate
BondingCu backing plate optionalImproves heat dissipation
Recommended ProcessRF sputtering preferredSuitable for semiconducting materials
MaterialKey AdvantageTypical Application
Manganese Telluride (MnTe)Antiferromagnetic semiconductor behaviorSpintronic research
Manganese Selenide (MnSe)Similar magnetic properties with different band gapMagnetic thin films
Cadmium Telluride (CdTe)Direct band gap semiconductorSolar cells
Tellurium (Te)Semiconductor with high anisotropyPhase-change & electronics
QuestionAnswer
Can the Mn:Te ratio be customized?Yes, slight compositional adjustments can be supplied upon request.
Is bonding necessary for small targets?For laboratory-scale targets, bonding is optional; it is recommended for larger or high-power systems.
What sputtering method is recommended?RF sputtering is generally preferred due to semiconducting properties.
Are small R&D quantities available?Yes, small-diameter targets are available for research use.
How is the product packaged?Vacuum-sealed with protective cushioning and export-grade cartons or wooden crates.

Typical Thin-Film Applications

  • Chalcogenide thin films for optical, infrared, electronic, thermoelectric, and phase-change research
  • Compound semiconductor layers and advanced-material thin-film studies
  • Projects where composition retention and controlled sputtering of brittle materials are important

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

What sputtering mode is commonly used for Manganese Telluride?

RF magnetron sputtering is often considered when the target conductivity is limited or when more conservative operation is preferred for brittle, composition-sensitive compounds.

Can Manganese Telluride films lose sulfur, selenium, or tellurium during deposition?

Yes. Composition drift can occur because of preferential sputtering, substrate heating, re-sputtering, and volatile-component loss. Film composition should be checked when stoichiometry is important.

Why is bonding important for a Manganese Telluride target?

Many chalcogenide targets are brittle and have modest thermal conductivity. A suitable backing plate and bonding layer can improve mechanical support and heat transfer during sputtering.

Does the target composition guarantee film stoichiometry for MnTe Target?

No. The target composition is the starting source composition, but the deposited film can still shift because of process variables. Film analysis should be used to confirm the final stoichiometry.

What process variables should be monitored when sputtering Manganese Telluride?

Useful variables include power density, working pressure, substrate temperature, cooling, target conditioning, and deposited-film composition. If reactive gas is used, gas ratio should also be controlled carefully.

What should I send TFM for a custom Manganese Telluride target?

Please provide composition or formula, purity, dimensions, quantity, backing or bonding details, cathode model, and any film-composition or inspection requirements relevant to your project.

Order Now

MnTe TRG 1:1 at% Ø2″×2mm Bonded to 2mm Cu BP, Ø2" × 6 mm, Manganese Telluride (MnTe), 3N5 (45/55 at%)

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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