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ST0264 Molybdenum Disilicide Sputtering Target, MoSi2

Chemical Formula: MoSi2
Catalog Number: ST0264
CAS Number: 12136-78-6
Purity: >99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Molybdenum Disilicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Molybdenum Disilicide Sputtering Target Description

The molybdenum disilicide sputtering target is a type of silicide ceramic sputtering target composed of molybdenum and silicon. This material is used for high-temperature applications and provides excellent performance in thin film deposition processes, including those for decoration, semiconductor, display, LED, and photovoltaic devices. Its unique properties make it suitable for functional coatings and applications in various industries, such as optical information storage, glass coating (e.g., car glass and architectural glass), and optical communication.

Molybdenum

Molybdenum is a chemical element that originated from the Greek word molybdos, meaning lead. It was first mentioned in 1778 by Carl Wilhelm Scheele, and its isolation was later accomplished by Jöns Jacob Berzelius and Wilhelm Hjelm. The canonical chemical symbol for molybdenum is “Mo.” It has an atomic number of 42 and is located in Period 5 and Group 6 of the periodic table, belonging to the d-block. The relative atomic mass of molybdenum is 95.94(2) Dalton, with the number in brackets indicating the uncertainty.

Related Product: Molybdenum Sputtering Target

Silicon

Silicon is a chemical element derived from the Latin silex or silicis, meaning flint. It was first mentioned in 1824 by Jöns Jacob Berzelius, who also accomplished its isolation. The canonical chemical symbol for silicon is “Si.” It has an atomic number of 14 and is located in Period 3 and Group 14 of the periodic table, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, with the number in brackets indicating the uncertainty.

Molybdenum Disilicide Sputtering Target Specification

Material TypeMolybdenum Disilicide
SymbolMoSi2
Melting Point2,050°C
Type of BondIndium, Elastomer
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Molybdenum Disilicide Sputtering Target Target Bonding

Indium bonding and elastomeric target bonding services are available for molybdenum disilicide sputtering targets. Stanford Advanced Materials (SAM) is dedicated to machining standard backing plates and collaborating with the Taiwan Bonding Company to offer these bonding services. For inquiries regarding target bonding materials, methods, and services, please click here.

Molybdenum Disilicide Sputtering Target Application

The molybdenum disilicide sputtering target is utilized in various applications, including thin film deposition, decoration, and the production of semiconductor devices. It is also employed in displays, LEDs, photovoltaic devices, and functional coatings. Additionally, it serves other industries such as optical information storage, glass coatings for automotive and architectural glass, and optical communication.

Molybdenum Disilicide Sputtering Target Packing

Our molybdenum disilicide sputter targets are carefully tagged and labeled externally to ensure efficient identification and quality control. We take great care to prevent any damage during storage or transportation.

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TFM offers Molybdenum Disilicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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