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ST0985 Molybdenum Silicon Sputtering Target, MoSi

Chemical Formula MoSi
Catalog No. ST0985
CAS Number –
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

TFM specializes in Molybdenum Silicon Sputtering Targets, emphasizing exceptional quality and cost-effectiveness. Our dedication to maintaining high standards ensures that clients receive top-tier sputtering targets at competitive prices, making them an ideal choice for various high-tech applications.

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Molybdenum Silicon Sputtering Target Description

Molybdenum Silicon Sputtering Targets are highly valued in advanced technology sectors due to their distinctive attributes. Their superior electrical conductivity makes them well-suited for use in electronic devices, delivering exceptional performance in semiconductor applications. Additionally, these targets are noted for their impressive thermal stability, enabling them to perform reliably even in high-temperature conditions, which is crucial for the production of electronic components.

In the realm of optoelectronics, Molybdenum Silicon Sputtering Targets stand out due to their specialized optical characteristics. They are particularly effective in applications involving laser devices and photodetectors. The targets also demonstrate excellent chemical stability, which allows them to maintain their performance and reliability in complex manufacturing environments. This makes them a dependable choice for various high-tech applications.

Related Product: Aluminum Silicon Copper Sputtering Target, Aluminum Silicon Sputtering Target

Molybdenum Silicon Sputtering Target Specifications

Compound Formula MoSi
Molecular Weight 124.035
Appearance Silver Metallic Target
Melting Point 2077 °C
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Molybdenum Silicon Sputtering Target Handling Notes

Indium bonding is highly recommended for Molybdenum Silicon Sputtering Targets due to certain material characteristics that can complicate traditional sputtering processes. Molybdenum Silicon exhibits brittleness and low thermal conductivity, making it prone to thermal shock and potential performance issues during sputtering. Using Indium bonding helps to address these challenges by providing a more stable and effective attachment, thereby ensuring improved durability and consistent performance of the sputtering targets under operational conditions.

Molybdenum Silicon Sputtering Target Application

Molybdenum Silicon Sputtering Targets are highly valued across a range of high-tech applications due to their exceptional properties. In electronic device manufacturing, these targets are prized for their excellent electrical conductivity, making them essential for producing high-performance components such as semiconductors, transistors, and integrated circuits. Their role extends into optoelectronics as well, where their optical properties make them well-suited for laser devices and photodetectors, supporting advancements in laser technology and optical communications.

Additionally, Molybdenum Silicon Sputtering Targets contribute to the efficiency of solar cell production. Their combination of electrical and optical properties enhances solar energy conversion, making them a crucial component in the development of advanced solar technologies.

Molybdenum Silicon Sputtering Target Packaging

We ensure that our Molybdenum Silicon Sputtering Targets are meticulously handled during both storage and transportation to maintain their quality and integrity.

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TFM’s Molybdenum Silicon Sputtering Targets are offered in a range of forms, purities, and sizes. We focus on producing high-purity physical vapor deposition (PVD) materials with optimal density and the smallest average grain sizes, tailored for applications in semiconductor manufacturing, chemical vapor deposition (CVD), and physical vapor deposition (PVD) for display and optical uses.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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