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N-type Silicon Sputtering Target (N-doped Si)

Chemical Formula: N-type Silicon
Catalog Number: TFM-SPT-0420
CAS Number: 7440-21-3
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

N-type Silicon sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Product Overview

N-type Silicon Sputtering Target (N-doped Si) (N-doped Si) is a composition-specific sputtering target for thin-film deposition and PVD process development. The practical specification normally includes chemistry, purity, dimensions, density, target configuration, and any bonding or backing requirement needed by the sputtering cathode.

Material and Deposition Characteristics

Power mode and process conditions should be selected according to the target conductivity, thermal behavior, and the requirements of the cathode system. For less common materials, conservative initial power density and film-composition verification are good practice.

Technical Data

ParameterTypical Value / RangeImportance
Purity99.999% (5N) typicalHigh purity ensures semiconductor-grade film quality
Dopant TypeP / As / SbDetermines electrical conductivity
ResistivityCustom range (e.g., 0.001–10 Ω·cm)Controls carrier concentration
Diameter25 – 300 mm (custom)Compatible with various sputtering systems
Thickness3 – 10 mmInfluences sputtering rate and target lifetime
BondingCopper backing plate (optional)Improves heat transfer and structural stability
MaterialKey AdvantageTypical Application
N-type Silicon (N-doped Si)High electron conductivitySemiconductor devices and photovoltaic layers
P-type SiliconHole conductivityComplementary semiconductor structures
Undoped SiliconHigh purity but low conductivityResearch and insulating layers
QuestionAnswer
What does N-type silicon mean?N-type silicon contains donor dopants such as phosphorus or arsenic that introduce extra electrons, increasing electrical conductivity.
Why is doping required for sputtering targets?Doping improves electrical conductivity, allowing the target to be used in DC magnetron sputtering systems.
Can the resistivity be customized?Yes, dopant concentration can be adjusted to achieve specific resistivity levels required by semiconductor processes.
Are bonded targets available?Yes, N-type silicon targets can be bonded to copper backing plates for improved thermal management during sputtering.
Which industries use N-type silicon sputtering targets?Semiconductor manufacturing, solar cell production, display technologies, and advanced electronics research laboratories.

Typical Thin-Film Applications

  • Thin-film research and materials-development projects requiring a composition-specific sputtering source
  • Semiconductor, optical, energy, electronic, or laboratory coatings depending on the material system
  • Custom R&D work where target composition, purity, and geometry need to be specified together

Target Configuration and Ordering Considerations

For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.

Frequently Asked Questions

What is the main reason to use a N-type Silicon (N-doped Si) sputtering target?

It provides a composition-specific source for thin-film deposition when the target material itself is important to the desired film chemistry or process.

How should the sputtering mode for N-type Silicon (N-doped Si) be selected?

The power mode should be chosen according to target conductivity, thermal behavior, and equipment capability. Less-conductive materials are commonly evaluated with RF power.

Why are density and microstructure important for N-type Silicon (N-doped Si) targets?

These factors can influence erosion stability, thermal behavior, particle generation, and the risk of cracking or local hot spots.

Can N-type Silicon (N-doped Si) be supplied with a backing plate?

Yes. If the material is brittle or the cathode requires it, a bonded configuration can be reviewed according to target size, thickness, cooling, and power.

Does target composition always equal film composition?

No. Film chemistry may differ because of sputtering yields, process conditions, substrate temperature, re-sputtering, and chamber history. Film verification is recommended when composition matters.

What should I provide to request a quotation for N-type Silicon (N-doped Si)?

Please provide the composition, purity, dimensions, quantity, target configuration, cathode details, and any drawing or inspection requirements.

Order Now

Ø1" × 3.18 mm, Silicon (Si), 5N, Ø2" × 3.18 mm, Silicon (Si), 5N, Ø2" × 6.35 mm, Silicon (Si), 5N, Ø3" × 3.18 mm, Silicon (Si), 5N, Ø3" × 6.35 mm, Silicon (Si), 5N, Ø4" × 3.18 mm, Silicon (Si), 5N, Ø4" × 6.35 mm, Silicon (Si), 5N, Ø6" × 3.18 mm, Silicon (Si), 5N

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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