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ST0266 Nickel Silicide Sputtering Target, NiSi2

Chemical Formula: NiSi2
Catalog Number: ST0266
CAS Number: 12201-89-7
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Nickel Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

The Nickel Silicide Sputtering Target (NiSi₂) is a conductive metal silicide target widely used in semiconductor and microelectronic thin-film deposition. Owing to its excellent electrical conductivity, strong thermal stability, and superior compatibility with silicon substrates, NiSi₂ is a key material for contact layers, interconnects, and silicide-based device structures. It is especially valued in applications requiring low contact resistance and reliable high-temperature performance.

Detailed Description

Nickel Silicide sputtering targets are produced from high-purity nickel and silicon through controlled reaction synthesis, alloying, and precision machining. This manufacturing approach ensures uniform stoichiometry, high density, and a stable crystalline structure, all of which are essential for consistent sputtering behavior and reproducible film properties.

Compared with pure nickel or silicon targets, NiSi₂ offers lower resistivity and improved interfacial stability with silicon, reducing diffusion-related issues during thermal processing. During magnetron sputtering, NiSi₂ targets provide predictable erosion profiles and stable plasma characteristics, enabling accurate control of film thickness and composition.

Targets are available as monolithic silicide discs or bonded to copper or titanium backing plates to enhance heat dissipation and mechanical integrity under higher sputtering power conditions.

Applications

Nickel Silicide sputtering targets are commonly used in:

  • Semiconductor contacts and interconnect layers

  • CMOS and silicon-based device research

  • Low-resistance ohmic contacts

  • Diffusion barrier and adhesion layers

  • High-temperature electronic thin films

  • Academic and industrial thin-film R&D

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaNiSi₂Defines silicide electrical behavior
Purity99.9% – 99.99%Ensures film consistency
Target Diameter25 – 300 mm (custom)Fits standard sputtering guns
Thickness3 – 6 mm (custom available)Influences sputtering stability
Density≥ 99% of theoreticalPromotes uniform erosion
Backing PlateOptional (Cu / Ti)Improves thermal management
Deposition MethodDC / RF Magnetron SputteringProcess flexibility

Comparison with Related Silicide Targets

MaterialKey AdvantageTypical Application
Nickel Silicide (NiSi₂)Low resistivity, Si compatibilitySemiconductor contacts
Titanium Silicide (TiSi₂)Mature CMOS useInterconnects
Cobalt Silicide (CoSi₂)Thermal stabilityIntegrated circuits
Hafnium Silicide (HfSi₂)High-temperature stabilityAdvanced electronics

FAQ

QuestionAnswer
Is NiSi₂ suitable for silicon devices?Yes, it offers excellent compatibility and low contact resistance with silicon.
Can DC sputtering be used?Yes, DC sputtering is commonly used due to its good electrical conductivity.
Is bonding recommended?Bonded targets are recommended for larger diameters or higher power densities.
Are small R&D targets available?Yes, laboratory-scale sizes are supported.
How is the target packaged?Vacuum-sealed with protective cushioning to prevent oxidation or damage.

Packaging

Our Nickel Silicide Sputtering Targets (NiSi₂) are meticulously vacuum-sealed and externally labeled to ensure accurate identification and strict quality control. Shock-absorbing and moisture-resistant packaging is used to protect the target during storage and international transportation.

Conclusion

The Nickel Silicide Sputtering Target (NiSi₂) is a reliable material solution for depositing low-resistivity, thermally stable silicide thin films in semiconductor and microelectronic applications. With customizable dimensions, stable sputtering performance, and consistent material quality, NiSi₂ targets are well suited for both advanced research and emerging production environments.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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