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Niobium Oxide Sputtering Target

ST0180 Niobium Oxide Sputtering Target, Nb2O5

Chemical Formula: Nb2O5
Catalog Number: ST0180
CAS Number: 1313-96-8
Purity: 99.9%, 99.95%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Niobium Oxide  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

The Niobium Oxide Sputtering Target (Nb₂O₅) is a high-purity ceramic target widely used for depositing functional oxide thin films with excellent dielectric, optical, and electrochemical properties. Niobium pentoxide is known for its high refractive index, wide bandgap, and chemical stability, making it an important material in optical coatings, electronic devices, and energy-related thin-film technologies.

Detailed Description

Niobium oxide (Nb₂O₅) is a transition-metal oxide that exhibits strong insulating behavior and favorable optical characteristics. As a sputtering target, Nb₂O₅ enables precise deposition of stoichiometric thin films with controlled thickness and uniform microstructure.

Our Nb₂O₅ sputtering targets are manufactured from high-purity niobium oxide powders through controlled calcination, granulation, and high-temperature sintering. This production route ensures:

  • High phase purity, minimizing secondary phases

  • Dense and homogeneous microstructure, supporting stable sputtering rates

  • Excellent stoichiometric transfer, critical for optical and dielectric film performance

Targets can be supplied as unbonded ceramic discs or bonded to copper or titanium backing plates to enhance heat dissipation and mechanical stability during RF sputtering.

Applications

Niobium Oxide sputtering targets are commonly used in:

  • Optical coatings with high refractive index

  • Dielectric layers for capacitors and electronic components

  • Electrochromic and photoelectrochemical devices

  • Thin-film batteries and energy storage research

  • Semiconductor and advanced functional oxide R&D

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaNb₂O₅Defines dielectric and optical behavior
Crystal StructureOrthorhombic / Amorphous (film-dependent)Influences optical properties
Purity99.9% – 99.99%Reduces defects and leakage current
Diameter25 – 300 mm (custom)Compatible with standard sputtering systems
Thickness3 – 6 mmEnsures sputtering stability
Density≥ 95% theoreticalImproves film uniformity
BondingOptional Cu / Ti backing plateEnhances thermal management

Comparison with Related Oxide Targets

MaterialKey AdvantageTypical Application
Nb₂O₅High refractive index, good insulationOptical & dielectric films
Ta₂O₅Excellent dielectric strengthCapacitors, optical coatings
TiO₂Photocatalytic activityOptical & energy applications
HfO₂High-k dielectricAdvanced semiconductor devices

FAQ

QuestionAnswer
Is RF or DC sputtering recommended?RF sputtering is typically recommended for Nb₂O₅ ceramic targets.
Can the target be bonded to a backing plate?Yes, Cu or Ti backing plates are available.
Can film properties be tuned?Yes, deposition parameters and post-annealing affect film structure and properties.
Is customization available?Yes, target size, thickness, and bonding can be tailored.

Packaging

Our Niobium Oxide Sputtering Targets (Nb₂O₅) are individually labeled and vacuum-sealed to ensure traceability and prevent contamination. Protective packaging is used to avoid mechanical damage during storage and international transportation.

Conclusion

The Niobium Oxide Sputtering Target (Nb₂O₅) provides a reliable solution for depositing high-quality dielectric and optical thin films. With high purity, dense structure, and flexible customization options, it supports demanding research and industrial sputtering applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.*

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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