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VD0567B PbxSn1-xAs Evaporation Material

MSDS File
Material TypePbxSn1-xAs
SymbolPbxSn1-xAs
Melting Point (°C)
Theoretical Density (g/cc)
Z Ratio
E-Beam
E-Beam Crucible Liner Material
Temp. (°C) for Given Vap. Press. (Torr)
Comments

PbxSn1-xAs Evaporation Material

TFM offers high-purity PbxSn1-xAs Evaporation Material, engineered for thin-film deposition in advanced semiconductor, optoelectronic, and infrared detection applications. This material, composed of lead (Pb), tin (Sn), and arsenic (As), exhibits tunable electronic and optical properties, making it highly suitable for next-generation infrared (IR) sensors, thermoelectric devices, and optoelectronic components.

Optimized for thermal evaporation and electron beam (E-beam) evaporation, PbxSn1-xAs Evaporation Material ensures precise stoichiometry control, high film uniformity, and excellent adhesion to various substrates.

Key Features and Advantages

  • Adjustable Bandgap & Electronic Properties: The Pb-Sn-As composition enables bandgap engineering, enhancing its performance for infrared detection and optoelectronic applications.

  • High Purity & Low Defect Density: Ensures uniform thin-film deposition with minimal impurities, improving device efficiency and reliability.

  • Superior Infrared Absorption: Ideal for thermal imaging, IR sensors, and night-vision applications.

  • Stable Chemical & Thermal Behavior: Maintains structural integrity under high-temperature processing conditions, ensuring long-term performance.

  • Customizable Stoichiometry (PbxSn1-xAs): Available in various Pb/Sn ratios, allowing precise tuning of electrical and optical properties for specific applications.

Applications

  • Infrared & Thermal Imaging Sensors: Used in IR detectors, thermal cameras, and night-vision systems.

  • Optoelectronic & Photodetector Devices: Plays a key role in photoelectric conversion and infrared communication.

  • Semiconductor & Energy Harvesting Devices: Supports thermoelectric applications for waste heat recovery and energy efficiency.

  • Thin-Film Transistors (TFTs): Provides high carrier mobility for next-generation electronic circuits.

Industry Impact and Customization

TFM’s PbxSn1-xAs Evaporation Material enables innovations in infrared detection, optoelectronics, and semiconductor research, offering custom material compositions to meet specific industry requirements. Our precision manufacturing ensures high film quality, controlled stoichiometry, and superior performance, making it a reliable choice for cutting-edge thin-film coatings.

With its exceptional electrical, optical, and thermal properties, TFM’s PbxSn1-xAs Evaporation Material is an essential material for high-performance infrared sensors, optoelectronic devices, and semiconductor applications, delivering optimized efficiency and long-term stability.

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FAQ

  • They are high‐purity substances (e.g. metals, alloys, or compounds) used in thermal or electron‐beam evaporation processes to form thin films on substrates.

  • Typically, they’re processed into a form (often ingots, pellets, or wires) that can be efficiently vaporized. Preparation emphasizes high purity and controlled composition to ensure film quality.

  • Thermal evaporation and electron-beam (e-beam) evaporation are the two main techniques, where material is heated (or bombarded with electrons) until it vaporizes and then condenses on the substrate.

  • Thermal evaporation heats the material directly (often using a resistive heater), while e-beam evaporation uses a focused electron beam to locally heat and vaporize the source material—each method offering different control and energy efficiency.

  • Key parameters include source temperature, vacuum level, deposition rate, substrate temperature, and the distance between the source and the substrate. These factors influence film uniformity, adhesion, and microstructure.

  • Evaporation generally produces high-purity films with excellent control over thickness, and it is especially suitable for materials with relatively low melting points or high vapor pressures.

  • Challenges include issues with step coverage (due to line-of-sight deposition), shadowing effects on complex topographies, and possible re-evaporation of material from the substrate if temperature isn’t properly controlled.

  • Common evaporation materials include noble metals (e.g., gold, silver), semiconductors (e.g., silicon, germanium), metal oxides, and organic compounds—each chosen for its specific optical, electrical, or mechanical properties.

  • Selection depends on desired film properties (conductivity, optical transparency, adhesion), compatibility with the evaporation process, and the final device application (semiconductor, optical coating, etc.).

  • Optimizing substrate temperature, deposition rate, and chamber vacuum are critical for ensuring that the film adheres well and forms the intended microstructure without defects.

  • Troubleshooting may involve checking the source material’s purity, ensuring stable source temperature, verifying the vacuum level, adjusting the substrate’s position or temperature, and monitoring deposition rate fluctuations.

While evaporation tends to yield very high purity films with excellent thickness control, it is limited by its line-of-sight nature. In contrast, sputtering can deposit films more uniformly on complex surfaces and is more versatile for a broader range of materials.

 

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