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ST0406 Planar Tungsten (W) Sputtering Target

Chemical Formula: W
Catalog Number: ST0406
CAS Number: 7440-33-7
Purity: 99.95%, 99.99%, 99.999%
Thermal Conductivity: 174 W/m.K
Melting Point (°C): 3,410
Coefficient of Thermal Expansion: 4.5 x 10-6/K

Planar Tungsten  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Planar Tungsten (W) Sputtering Targets are critical deposition materials widely used in semiconductor manufacturing, microelectronics, and advanced thin film applications. Tungsten’s exceptional melting point, low vapor pressure, and excellent electrical conductivity make it a preferred material for forming dense, stable films in demanding sputtering environments.

Detailed Description

Planar tungsten sputtering targets are manufactured from high-purity tungsten using carefully controlled powder metallurgy and densification processes. These steps ensure uniform grain structure, high density, and consistent composition across the entire target surface—key factors for achieving stable sputtering rates and uniform film thickness.

Due to tungsten’s hardness and high melting point, precision machining is essential. Each planar target is finished to tight flatness and thickness tolerances to ensure proper bonding (when required) and efficient heat dissipation during sputtering. Targets may be supplied unbonded for smaller sizes or bonded to copper backing plates for improved thermal conductivity and mechanical stability in high-power magnetron sputtering systems.

Tungsten targets exhibit excellent resistance to deformation, low particulate generation, and long service life, supporting reliable deposition in both R&D and volume production settings.

Applications

  • Semiconductor interconnects and barrier layers

  • Thin film resistors and conductive coatings

  • Integrated circuits and MEMS devices

  • Display panels and flat panel electronics

  • Research-scale PVD and materials science studies

Technical Parameters

ParameterTypical Value / RangeImportance
MaterialTungsten (W)High melting point, stable sputtering
Purity99.95% – 99.999%Impurity control affects film performance
Target TypePlanar (rectangular or circular)Compatible with planar magnetrons
Diameter / SizeCustom sizes availableMatches sputtering cathodes
Thickness3 – 10 mm (typical)Influences target lifetime
Backing PlateCopper (optional)Enhances heat transfer

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Tungsten (W)High thermal stabilitySemiconductor metallization
Molybdenum (Mo)Lower density, easier machiningDisplay & electronics
Tantalum (Ta)Excellent barrier propertiesAdvanced IC fabrication

FAQ

QuestionAnswer
Can planar tungsten targets be customized?Yes, size, thickness, purity, and bonding can be tailored.
Are bonded targets available?Yes, copper-backed tungsten targets are available for high-power use.
Is tungsten suitable for DC sputtering?Yes, tungsten is commonly used with DC magnetron sputtering.
How is target flatness controlled?Precision grinding and inspection ensure tight tolerances.
Is a Certificate of Analysis provided?Yes, CoA is available upon request.

Packaging

Our Planar Tungsten (W) Sputtering Targets are carefully cleaned, labeled, and vacuum-sealed to prevent contamination. Each target is protected with shock-absorbing materials and packed in export-grade cartons or wooden crates to ensure safe transportation.

Conclusion

Planar Tungsten (W) Sputtering Targets offer excellent durability, stable sputtering behavior, and high purity for advanced thin film deposition. With flexible customization options and strict quality control, they are a reliable choice for semiconductor manufacturing, electronics, and research-driven PVD applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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