Product Overview
Rotatory Tungsten (W) Sputtering Target (W) is a conductive sputtering target used to deposit elemental thin films where purity, film cleanliness, and stable metallic sputtering behavior are important. For thin-film applications, the practical selection criteria are not limited to the target chemistry alone: purity grade, target density, dimensions, grain structure, surface finish, and backing configuration can all influence process stability and film quality.


Material and Deposition Characteristics
Because the target is electrically conductive, DC magnetron sputtering is often applicable, although pulsed-DC or other power modes may also be used depending on the deposition system and film target. For high-specification films, target grain structure, residual stress, and surface preparation can influence erosion uniformity and the morphology of the deposited layer. When higher power loading or system-specific mounting is involved, a bonded target assembly may also be considered.
Technical Data
| OD | ID | L | |
| Dimension | 5.5ā-7ā | 5ā-5.5ā | <138ā |
| Material Type | Tungsten |
| Symbol | W |
| Color/Appearance | Grayish White, Lustrous, Metallic |
| Melting Point | 3410°C |
| Density | 19.3 g/cm3 |
Typical Thin-Film Applications
- High-temperature and refractory thin films for semiconductor and advanced device structures
- Diffusion barriers, electrodes, interconnect-related layers, and protective coatings
- Research and production where thermal stability and low vapor pressure are important
Target Configuration and Ordering Considerations
For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.
Frequently Asked Questions
Can Rotatory Tungsten (W) sputtering targets be used with DC magnetron sputtering?
Yes. Conductive metallic targets are commonly processed with DC magnetron sputtering, although pulsed-DC or other modes may also be used depending on the equipment and film objective.
What purity grade should I choose for a Rotatory Tungsten (W) target?
The required purity should be selected from the contamination limits and performance needs of the deposited film. Higher purity can reduce unwanted impurities, but the optimum grade should match the application rather than default to the highest available level.
Why do density and microstructure matter for Rotatory Tungsten (W) targets?
Target density, grain structure, and residual stress can influence erosion behavior, process stability, and the morphology of the deposited film. These factors become more important as film-quality requirements become tighter.
Can a Rotatory Tungsten (W) target be bonded to a copper backing plate?
Yes. A bonded assembly may be used when the cathode design requires a backing plate or when improved support and heat transfer are desirable. The bonding method should be matched to target thickness and operating conditions.
What are common applications of sputtered Rotatory Tungsten (W) films?
Typical uses include conductive layers, metallization, reflective or protective coatings, and composition-specific PVD research. The exact application depends on the properties of the element and the final film stack.
What information should I send TFM for a custom Rotatory Tungsten (W) target?
Please provide target dimensions, thickness, purity, quantity, target style, backing-plate requirement, cathode model if known, and any tolerance, surface-finish, inspection, or documentation requirements.



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